Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Yao, Liyong; Ao, Jianping; Jeng, Ming–Jer; Bi, Jinlian; Gao, Shoushuai; Sun, Guangyi; He, Qiang; Zhou, Zhiqiang; Sun, Yun; Chang, Liann‐Be

doi:10.3390/ma9040241

Cited by 12 publications

(8 citation statements)

References 32 publications

(54 reference statements)

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“…The altered composition and elemental abundance within the precursor thin films can strongly affect CZTSSe pathway formation. The Sn-poor samples with rich Cu and Zn compositions may have consumed the formation of secondary phases, such as Sn(S,Se) 2 , during the annealing process by intermediate reactions (reactions and ), which ease the formation of the pure kesterite phase . Further, increased amounts of the excess Sn content in the precursor thin films might precipitate as Sn-based secondary phase Sn(S,Se) 2 . …”

Section: Resultsmentioning

confidence: 99%

Achieving Low V_OC-deficit Characteristics in Cu₂ZnSn(S,Se)₄ Solar Cells through Improved Carrier Separation

Karade

Choi

Gang

et al. 2021

ACS Appl. Mater. Interfaces

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Kesterite-based thin-film solar cells (TFSCs) have recently gained significant attention in the photovoltaic (PV) sector for their elemental earth abundance and low toxicity. An inclusive study from the past reveals basic knowledge about the grain boundary (GB) and grain interior (GI) interface. However, the compositional dependency of the surface potential within GBs and GIs remains unclear. The present work provides insights into the surface potential of the bulk and GB interfaces. The tin (Sn) composition is sensitive to the absorber morphology, and therefore, it significantly impacts absorber and device properties. The absorber morphology improves with the formation of larger grains as the Sn content increases. Additionally, the presence of Sn(S,Se) 2 and increased [Zn Cu + V Cu ] A-type defect cluster density are observed, validated through Raman analysis. The secondary ion mass spectroscopy analysis reveals the altered distribution of sulfur (S) and sodium (Na) with higher near-surface accumulation. The synergistic outcome of the increased density of defects and the accumulation of S near the interface provides a larger GB and GI difference and expedites carrier separation improvement. Consequently, at an optimum compositional ratio of Cu/(Zn+Sn) = ∼0.6, the power conversion efficiency (PCE) is significantly improved from 6.42 to 11.04% with a record open-circuit voltage (V OC ) deficit of 537 mV.

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Section: Resultsmentioning

confidence: 99%

Achieving Low V_OC-deficit Characteristics in Cu₂ZnSn(S,Se)₄ Solar Cells through Improved Carrier Separation

Karade

Choi

Gang

et al. 2021

ACS Appl. Mater. Interfaces

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“…The excessive selenization of Mo should be avoided as it causes delamination of the back electrode from a substrate due to the significant volume expansion by the transformation from Mo to MoSe 2 (almost four times) [ 30 , 31 ]. In contrast, the formation of a thin layer of MoSe 2 should have a beneficial effect on the adhesion of the CZTSe absorber to the Mo back electrode and the semiconductor/metal contact, which changes from a Schottky (CZTSe-Mo) to Ohmic type (CZTSe-MoSe 2 -Mo), thereby reducing the barrier of the hole transfer [ 32 , 33 ].…”

Section: Resultsmentioning

confidence: 99%

Performance Enhancement in Powder-Fabricated Cu2(ZnSn)Se4 Solar Cell by Roll Compression

et al. 2023

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Despite the improved conversion efficiency of Cu2(ZnSn)Se4 (CZTSe) solar cells, their roll-to-roll fabrication nonetheless leads to low performance. The selenization time and temperature are typically considered major parameters for a powder-based CZTSe film; meanwhile, the importance of the densification during the roll-to-roll process is often overlooked. The densification process is related to the porosity of the light-absorbing layer, where high porosity lowers cell performance. In this study, we fabricated a dense CZTSe absorber layer as a method of controlling the compression of a powder precursor (Cu1.7(Zn1.2Sn1.0)S4.0 (CZTS)) during the roll-press process. The increased particle packing density of the CZTS layer was crucial in sintering the powder layer into a dense film and preventing severe selenization of the Mo back electrode. The pressed absorber layer of the CZTSe solar cell exhibited a more uniform chemical composition determined using dynamic secondary ion mass spectrometry (SIMS). Under the AM 1.5G illumination condition, the power conversion efficiency of the pressed solar cell was 6.82%, while the unpressed one was 4.90%.

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“…1). According to Yao et al (2016), the MoSe 2 layer forms at the CZTSe/Mo interface when the metal precursor of the CZTSe films contains excess Sn and the SnSe-or/ and SnSe 2 -containing phase in the CZTSe thin films may have catalyzed the formation of MoSe 2 layer. Taking this into consideration, it can be concluded that the TaSe 2 layer have similar formation features at the CZTSe/Ta interface in the CZTSe thin films depending on the Sn content.…”

Section: X-ray Diffractionmentioning

confidence: 99%

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

et al. 2020

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The temperature dependence (in range from 24 to 290 K) of Raman spectroscopy of the Cu 2 ZnSnSe 4 (CZTSe) films with Zn-rich (series A) and Zn-poor (series B) composition obtained on a Ta foil is investigated. Analisys and approximation by the Lorentz function of the CZTSe Raman spectra suggests that the CZTSe most intense Raman peak consists of two modes (at 192/189 and 194/195 cm −1 ), which are slightly shifted from each other. In addition, the Raman peaks around 192 and 189 cm −1 lead to asymmetric broadening of dominant peaks at 194 and 195 cm −1 in Raman spectra of the CZTSe films series A and B, respectively. In the case of the Sn-rich CZTSe films, we attribute of Raman peak around 189 cm −1 to SnSe 2 compound. However in the case of the Snpoor CZTSe films, the observable shift is too high to assign confidently the 192 cm −1 band to a SnSe 2 compound, which was not detected by XRD analysis. We suppose that this mode is attributed to disordered kesterite structure. The temperature dependence Raman spectra for both series of the CZTSe films shows that a change temperature from 290 to 24 K leads to position shift and narrowing of the CZTSe Raman A-modes. The calculated temperature coefficients and anharmonic constants in Klemens model approximations for temperature dependence of shift position and FWHM of the CZTSe A-modes shown that four-phonon process has dominant contribution in damping process and as a consequence in Raman spectrum changes for two series of the CZTSe films.

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Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Cited by 12 publications

References 32 publications

Achieving Low V_OC-deficit Characteristics in Cu₂ZnSn(S,Se)₄ Solar Cells through Improved Carrier Separation

Achieving Low V_OC-deficit Characteristics in Cu₂ZnSn(S,Se)₄ Solar Cells through Improved Carrier Separation

Performance Enhancement in Powder-Fabricated Cu2(ZnSn)Se4 Solar Cell by Roll Compression

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

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Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Cited by 12 publications

References 32 publications

Achieving Low VOC-deficit Characteristics in Cu2ZnSn(S,Se)4 Solar Cells through Improved Carrier Separation

Achieving Low VOC-deficit Characteristics in Cu2ZnSn(S,Se)4 Solar Cells through Improved Carrier Separation

Performance Enhancement in Powder-Fabricated Cu2(ZnSn)Se4 Solar Cell by Roll Compression

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

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Achieving Low V_OC-deficit Characteristics in Cu₂ZnSn(S,Se)₄ Solar Cells through Improved Carrier Separation

Achieving Low V_OC-deficit Characteristics in Cu₂ZnSn(S,Se)₄ Solar Cells through Improved Carrier Separation