Effect of Small‐Angle Grain Boundary on the Mechanical Properties in Direct Silicon Bonded Wafer

Abstract

The mechanical properties of small-angle grain boundary (GB) in direct silicon bonded wafer are investigated by dislocation motion using the Vickers micro-indentation combined with nano-indentation technique. The dislocation motion is thoroughly hampered at the GB, due to the large strain field (comprehensive stress as high as %339 MPa), which is demonstrated by the micro-Raman spectroscopy measurement. Nanoindentation tests directly on GB show that Young's modulus and hardness are almost identical to those in the grain. The results indicate that electrically active small-angle GB with high stress should not be the weak point of mechanical strength in multi-crystalline silicon.

High-performance CsPbBr3-silicon heterojunction photodetectors fabricated by chemical vapor deposition

“…Afterward, put the Si wafer in a mixture of 10 ml HF and 70 ml distilled water and leave for 5 min, and then wash with distilled water three times. Finally, put the Si wafer in a mixed solution of 10 ml HF, 10 ml H 2 O 2 and 50 ml distilled water in a 80 °C water bath for 15 min, clean three times with distilled water and then dry by nitrogen gas to prepare the conventionally cleaned Si wafer [44]. The etched SiNWs substrate is processed by silver-assisted HF etching as followed [45].…”