Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

Vettumperumal, R.; Kalyanaraman, S.; Thangavel, R.

doi:10.1142/s2251237317500046

Cited by 3 publications

(2 citation statements)

References 35 publications

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“…There are several Ru compounds in the literature. Ruthenium (III) chloride is one of them and used to produce Ru-doped ZnO thin lms in some studies [20][21][22][23]. Vettumperumal et al [20] prepared nanocrystalline Ru-doped ZnO thin lm using sol-gel spin-coating with Ruthenium (III) chloride and investigated structural properties and UV characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…Ruthenium (III) chloride is one of them and used to produce Ru-doped ZnO thin lms in some studies [20][21][22][23]. Vettumperumal et al [20] prepared nanocrystalline Ru-doped ZnO thin lm using sol-gel spin-coating with Ruthenium (III) chloride and investigated structural properties and UV characteristics. They observed an improvement in sheet resistance with an increase in the dopant amount of Ru (1-2 mol%) and recorded an improved I-V characteristic response at 1 mol% of thin lms.…”

Section: Introductionmentioning

confidence: 99%

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The Influence of Doping Perimidine Ruthenium Complexes on Structural, Optic, and Residual Stress Properties of ZnO Thin Films

Demircan

Açıkgöz²,

Yalçın³

et al. 2022

Braz J Phys

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Novel perimidine ruthenium complexes ([Ru(L1-2)(p-cymene)Cl]Cl) were synthesized and these synthesized Ruthenium (Ru) complexes were added to ZnO at content of 2, 4, 6 wt.% to fabricate Rudoped ZnO thin lms by the sol-gel spin-coating method. These lms were characterized using XRD, SEM, FT-IR, UV-Vis, and Photoluminescence (PL) spectra. All of the lms possessed a hexagonal wurtzite structure, according to XRD data. The observed stress was compressive, except for the A4 sample, and ranged from 0.21 GPa to 2.117 GPa as the ruthenium content increased from 0-6%. Residual stress values of Ru-doped ZnO thin lms showed a lower value than pure ZnO lm. It was obtained that the crystalline quality tended to improve as well as lower residual stress with increasing Ru amount. In the visible range, all the lms exhibited approximately transmittance greater than 70%. Further, the optical bandgap was 3.20 eV for pure ZnO and all Ru-doped lms' bandgap had between 2.76 and 3.18 eV. This research shows that new high conjugated structures are promising as dopant materials for the ZnO thin lm, and good crystalline and optical properties could be obtained from the Ru doped ZnO lms prepared by sol-gel for nano-optoelectronic devices.

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