Effect of Residual Stress on Lattice Parameter and Hardness of Titanium Nitride Films Deposited by Reactive HCD Ion Plating

Abstract

Residual stress produced in titanium nitride films deposited onto substrates of high speed steel, SKH51, was studied by using sin 2 c method as a function of process parameters: deposition temperature, deposition time, electron beam current, substrate bias voltage, distance from an evaporation source to a substrate, tilt angle of a substrate axis, total gas pressure, and gas mixture ratioMeasurements showed that compressive stress occurred in the films except one deposited without any applied bias voltage to a substrate. Applying a little bias voltage to a substrate brought about a rapid increase in the compressive stress. Higher deposition temperature and lower deposition rate reduced the compressive stress. A decrease in total gas pressure increased the compressive stress. These results suggest that kinetic energy of incident ions on a substrate affects the generation of the compressive stress. In plane lattice parameter increased with an increase in compressive stress; this variation was in good agreement with the distance calculated on the basis of the Poisson ratio effect. Hardness of the films increased with an increase in the compressive stress. Grain size of the films was determined by the method based on``Williamson Hall plot'' which can exclude the contribution of micro strain from line broadening of X ray diffraction. Hall Petch relationship is established between the grain size and the hardness. It seems that mobility of adatoms is closely related to the magnitude of the residual compressive stress.

Effects of Compressive Stress on Corrosion-Protective Quality and Its Maintenance under a Corrosive Environment for TiN Films Deposited by Reactive HCD Ion Plating

“…Conditions for residual stress measurement were proposed previously. 11) We confirmed that all films were of single phase TiN.…”

“…However, it is considered that relaxation of stress occurs because of formation of many open pores by worsened adhesion of films in the range of lower substrate temperature. 11,21) Figure 14 shows the relationship between critical passivation current density i crit and compressive stress for two series of deposition temperatures T I and substrate bias voltages V B . Except for the 0 V-coated substrate, critical passivation current density i crit becomes higher with higher compressive stress: in other words, films of higher compressive stress have many open pores, which cause lower protective quality.…”

“…Previous works have investigated effects of process parameters on hardness, 8) chemical composition [N]/[Ti], 9) impurity oxygen concentration, 10) and residual stress 11) for titanium nitride films deposited by reactive hollow cathode discharge (HCD) ion plating. This paper specifically addresses only the effects of film thickness, deposition temperature, and substrate bias voltage on the corrosion-protective quality of titanium nitride films.…”

Synthesis of Carbon Nitride Films by Unbalanced Magnetron Sputtering Method and The Sliding Characteristics under Oil Lubrication

“…applied to the substrate, active particles, N ions and Ar ions don't collide with the synthesized film, and therefore, there is no compressive residual stress to be applied to the film and the hardness of the film is considered to be low. On the other hand, when a substrate bias is applied, since active particles, N ions and Ar ions are strongly attracted, compressive residual stress is generated and hardness is considered to increased [21,22]. Fig.…”