The lithographic performance of chemically amplified positive resists depends on controlling the delay time between the exposure and post‐exposure bake (PEB) process steps. The effect of post‐exposure delay (PED) was investigated in poly(t‐butoxycarbonyloxystyrene‐sulfone) formulated with photoacid generators (PAG) by a variety of analytical techniques including Rutherford backscattering, infrared, X‐ray photoelectron and laser ablation microprobe mass spectrometry. The results indicate that the base…
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