Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation

Optimized surface passivation of n and p type silicon wafers using hydrogenated SiNx layers

“…This agrees with recent research [12]. Passivation of a silicon surface can be achieved in two ways: by field-effect passivation or by neutralizing the dangling bond at the interface [13]. Sritharathikhun et al demonstrated that a fixed positive charge is suitable for field passivation of n type silicon substrate.…”

Interface Characterization and Electrical Transport Mechanisms in a-Si:H/c-Si Heterojunction Solar Cells

“…It is well known that the dangling bonds of a bare c-Si surface can be saturated using hydrogen for the lower surface recombination. 11 Thus, the improvement in eff with an increase in a-Si:H͑i͒ layer thickness can be explained by a reduction in the amplitude of the imaginary part, ͗ im,max ͘. However, after passing through an optimal point of 10 nm where the eff was maximum, a further increase in the a-Si:H͑i͒ layer thickness did not lead to a much improvement of the eff value, even for the increased hydrogen content.…”

Applicability of Child–Langmuir collision laws for describing a dc cathode sheath in N2O

“…N 2 O also serves in radiation dosimetry and in plasma processing. Discharges in N 2 O are also broadly employed for depositing films of hafnium oxides (Kim et al 2006), silicon oxides and oxynitrides (Alonso et al 1995;Lee et al 1995;Chakraborty et al 1998;Smith et al 2000; Barozzi et al 2008;Dao et al 2010), as well as for preliminary treating carbon material surfaces for a subsequent deposition of aluminum and titanium oxide films (Markeev et al 2013). In N 2 O plasma, one performed etching of polyimides (Munoz and Dominguez 1994).…”