G. Curello, R. Rengarajan, J. Faul, H. Wurzer, J. Amon, T. Gaertner, D. Henke, M. Schmeide, A. Kieslich
In this work, we report on the effect of different dual gate oxide (DGox) processes on the electrical properties of CMOS devices in deep submicron embedded DRAM (eDRAM) technology. Also discussed, is the effect of N+ Ion Implantation on the diffusion / segregation behaviour of B and In channel dopants. In particular, it will be shown that the N+ dose required to obtain a certain combination of dual gate oxide thickness varies with the gate oxide process. Effects of N+ dose on the In and B channel profiles are…
scite is a Brooklyn-based startup that helps researchers better discover and evaluate scientific articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by researchers from dozens of countries and is funded in part by the National Science Foundation and the National Institute of Drug Abuse of the National Institutes of Health.