MRS Proc. 2000 DOI: 10.1557/proc-610-b3.4 View full text
G. Curello, R. Rengarajan, J. Faul, H. Wurzer, J. Amon, T. Gaertner, D. Henke, M. Schmeide, A. Kieslich

Abstract: In this work, we report on the effect of different dual gate oxide (DGox) processes on the electrical properties of CMOS devices in deep submicron embedded DRAM (eDRAM) technology. Also discussed, is the effect of N+ Ion Implantation on the diffusion / segregation behaviour of B and In channel dopants. In particular, it will be shown that the N+ dose required to obtain a certain combination of dual gate oxide thickness varies with the gate oxide process. Effects of N+ dose on the In and B channel profiles are…

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