Effect of Mask Geometry Variation on Plasma Etching Profiles

Abstract

It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. The fabrication of vertical, three-dimensional features as enablers of these advanced technologies in semiconductor devices is commonly achieved using plasma etching. Of the available plasma chemistries, SF6/O2 is one of the most frequently applied. Therefore, having a predictive model for this process is indispensable in the design cycle of semiconductor devices. In this work, we implement a physical SF6/O2 plasma etching model which is based on Langmuir adsorption and is calibrated and validated to published equipment parameters. The model is implemented in a broadly applicable in-house process simulator ViennaPS, which includes Monte Carlo ray tracing and a level set-based surface description. We then use the model to study the impact of the mask geometry on the feature profile, when etching through circular and rectangular mask openings. The resulting dimensions of a cylindrical hole or trench can vary greatly due to variations in mask properties, such as its etch rate, taper angle, faceting, and thickness. The peak depth for both the etched cylindrical hole and trench occurs when the mask is tapered at about 0.5°, and this peak shifts towards higher angles in the case of high passivation effects during the etch. The minimum bowing occurs at the peak depth, and it increases with an increasing taper angle. For thin-mask faceting, it is observed that the maximum depth increases with an increasing taper angle, without a significant variation between thin masks. Bowing is observed to be at a maximum when the mask taper angle is between 15° and 20°. Finally, the mask etch rate variation, describing the etching of different mask materials, shows that, when a significant portion of the mask is etched away, there is a notable increase in vertical etching and a decrease in bowing. Ultimately, the implemented model and framework are useful for providing a guideline for mask design rules.

From Basics to Frontiers: A Comprehensive Review of Plasma-Modified and Plasma-Synthesized Polymer Films

“…-Mask scattering is when the high-energy ion bombardment physically sputters or chemically erodes the etching mask before scattering it across the substrate. Then, the scattered mask particles can settle on the substrate, causing irregular etching patterns, since they effectively act as a secondary, unintended mask [180]. These structures are formed using 2.1 µm diameter PS spheres as etching masks (reproduced with permission) [164].…”

“…(a,b) SEM photographs showing pillar and cone structures created on PMMA sheets.These structures are formed using 2.1 µm diameter PS spheres as etching masks (reproduced with permission)[164]. (c-h) Schematics of the main anomalies encountered in plasma RIE[180].…”

Assessing neutral transport mechanisms in aspect ratio dependent etching by means of experiments and multiscale plasma modeling

“…Note in this regard that the effect of the initial etch mask shape is a topic of high interest for advanced nodes as well (see e.g. [59][60][61]).…”