2007
DOI: 10.1016/j.tsf.2007.04.035
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Effect of LaNiO3 electrode on microstructural and ferroelectric properties of Bi3.25Eu0.75Ti3O12 thin films

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Cited by 23 publications
(13 citation statements)
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“…For this reason, LaNiO 3 is widely used as an electrode in oxide electronic devices, in particular in epitaxially strained perovskite thin films. [11][12][13][14][15] In addition, ultrathin films of LaNiO 3 were found to display thickness-dependent MITs.…”
Section: Introductionmentioning
confidence: 99%
“…For this reason, LaNiO 3 is widely used as an electrode in oxide electronic devices, in particular in epitaxially strained perovskite thin films. [11][12][13][14][15] In addition, ultrathin films of LaNiO 3 were found to display thickness-dependent MITs.…”
Section: Introductionmentioning
confidence: 99%
“…For a long time, the technological interest in this material has been limited to the development of highly conductive bottom electrodes for various ferroelectric thin-film devices [3][4][5]. But recently, the enthusiasm was renewed by experimental recognition of electric-field tunable metal-to-insulator transition and theoretical findings that heterostructures and superlattices composed of thin LaNiO 3 layers separated by wide-gap insulators could possibly exhibit high-temperature superconductivity [6][7][8].…”
Section: Introductionmentioning
confidence: 99%
“…When li + doping content is 0.10, the remanent polarization (2Pr) value is 21.6 μc/cm 2 which is higher than those of bEuT without li + doping (16.5 μc/cm 2 ) prepared under the same experimental conditions. The remanent polarization values are lower than that of metalorganic-solutionderived bEuT (x = 0.75) thin films annealed at the same temperature [8], [20]. This is possibly caused by relatively low Eu content in the li + -doped bEuT thin films.…”
Section: Improved Photoluminescence and Ferroelectric Properties Of (mentioning
confidence: 77%