Effect of Ge layer thickness on the formation of Mn5Ge3 thin film on Ge/Si (1 1 1)

Yaşasun, Burcu Toydemir; Onel, Aykut Can; Aykac, Ilknur Gunduz; Gülgün, Mehmet Ali; Arslan, Leyla Çolakerol

doi:10.1016/j.jmmm.2018.10.096

Cited by 9 publications

(1 citation statement)

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“…This is due to a spin polarization above 42% and a Curie temperature (T C ) of 296 K, which can be enhanced up to 400 and 450 K by oxygen [8] and carbon doping [9,10]. Also, through molecular beam epitaxy, Mn 5 Ge 3 has been synthesized as a continuous thin film on Ge(111) [11] substrates and recently on Si(111) [12], GaAs(111) [13] and Ge(001) [14]. Furthermore, Ge has a high spin diffusion length, of about 10 μm, at room temperature and high hole and electron mobilities, making it a suitable substrate for the design of spintronic devices [15].…”

Section: Introductionmentioning

confidence: 99%

Strong magnetization and anisotropy of Mn₅Ge₃ thin films on Ge(001)

Alvídrez-Lechuga

Antón

Gutiérrez-Pérez

et al. 2021

J. Phys.: Condens. Matter

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We report on the growth of Mn5Ge3 thin films on Ge(001) substrates following two methods: solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE). We have varied the thickness of the films, in order to study the magnetization and anisotropy evolution. A strongly enhanced magnetization of 1580 kA m−1, compared to 1200 ± 150 kA m−1 for films grown on Ge(111), has been measured on ultrathin films of 5 nm grown by RDE. Thicker films exhibited magnetizations <750 kA m−1. The films grown by SPE also exhibit strong magnetization of 1490 kA m-1 and a drop of magnetization by increasing the film thickness. The effective magnetic anisotropy exhibits a more complex behavior: increases on the SPE films and decreases on the RDE films while increasing the thickness of the films. Magnetostatic and interfacial anisotropies were considered and calculated. The results are discussed in terms of the growth methods and microstructure of the films.

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