Effect of electron irradiation on structural, morphological and photoluminescence properties of ZnS thin films

Dhaygude, H. D.; Shinde, Surendra K.; Takale, M. V.; Lohar, G. M.; Rath, M.C.; Fulari, V. J.

doi:10.1016/j.ceramint.2016.03.129

Cited by 21 publications

(10 citation statements)

References 16 publications

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“…The surface of the CdSe 0.6 Te 0.4 sample annealed at 300 • C exhibits vertical nanorod-like nanostructures. Further, the growth of nanoleaves is clearly observed at the top of the nanorods, possibly because of the annealing treatment [47][48][49]. These results suggest that annealing is useful for developing various surface structures.…”

Section: Fe-semmentioning

confidence: 82%

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Impact of Annealing Temperature on the Morphological, Optical and Photoelectrochemical Properties of Cauliflower-like CdSe0.6Te0.4 Photoelectrodes; Enhanced Solar Cell Performance

Ghodake

Kim

Shinde

et al. 2021

IJMS

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We are reporting on the impact of air annealing temperatures on the physicochemical properties of electrochemically synthesized cadmium selenium telluride (CdSe0.6Te0.4) samples for their application in a photoelectrochemical (PEC) solar cell. The CdSe0.6Te0.4 samples were characterized with several sophisticated techniques to understand their characteristic properties. The XRD results presented the pure phase formation of the ternary CdSe0.6Te0.4 nanocompound with a hexagonal crystal structure, indicating that the annealing temperature influences the XRD peak intensity. The XPS study confirmed the existence of Cd, Se, and Te elements, indicating the formation of ternary CdSe0.6Te0.4 compounds. The FE-SEM results showed that the morphological engineering of the CdSe0.6Te0.4 samples can be achieved simply by changing the annealing temperatures from 300 to 400 °C with intervals of 50 °C. The efficiencies (ƞ) of the CdSe0.6Te0.4 photoelectrodes were found to be 2.0% for the non-annealed and 3.1, 3.6, and 2.5% for the annealed at 300, 350, and 400 °C, respectively. Most interestingly, the PEC cell analysis indicated that the annealing temperatures played an important role in boosting the performance of the photoelectrochemical properties of the solar cells.

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Section: Fe-semmentioning

confidence: 82%

“…top of the nanorods, possibly because of the annealing treatment [47][48][49]. These results suggest that annealing is useful for developing various surface structures.…”

Section: Fe-semmentioning

confidence: 90%

Impact of Annealing Temperature on the Morphological, Optical and Photoelectrochemical Properties of Cauliflower-like CdSe0.6Te0.4 Photoelectrodes; Enhanced Solar Cell Performance

Ghodake

Kim

Shinde

et al. 2021

IJMS

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“…However, intensity of ( 015) and ( 110) peaks decreases with increasing the does above 40 kGy. This may be due to the thermally made lattice condition at high irradiation dose [48,49]. This result strongly suggests that due to irradiation crystallinity increases, without altering the rhombohedral crystal structure up to a certain irradiation dose [40].…”

Section: X-ray Diffraction (Xrd) Studiesmentioning

confidence: 90%

Effect of electron beam irradiation on EIS and photoelectrochemical performance of electrodeposited nanocrystalline Bi2Te3 thin films

Thorat¹,

Harale²,

Dhole³

et al. 2021

J Mater Sci: Mater Electron

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In this research work, we have synthesized nanocrystalline Bi 2 Te 3 thin films for photoelectrochemical (PEC) solar cell application by potentiostatic electrodeposition method on stainless steel substrates. Subsequently films were irradiated with electron beam irradiation (EBI) of energy 4.5 MeV at various doses of irradiation ranging from 10 to 50 kGy. The experimental results showed that synthesized Bi 2 Te 3 thin films having polycrystalline nature and rhombohedral crystal structure with momentous morphological digression through various doses of irradiation. The electrochemical active surface area (ECSA) and photoelectrochemical (PEC) performance of Bi 2 Te 3 thin films were improved well at irradiation dose of 40 kGy. The calculated values of photoconversion efficiency and fill factor for Bi 2 Te 3 thin film were found to be 0.1837% and 0.5383, respectively. The values of photoconversion efficiency and fill factor of same electrode before irradiation have values 0.0987% and 0.3979, respectively. The enhancement in efficiency and fill factor due to EBI were found 53% and 74%, respectively. The enhancement in PEC properties is due to increased active surface area of the Bi 2 Te 3 films after irradiation dose. The results showed that, EBI are capable to strengthen the quality of electrode for PEC solar cell application.

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“…Известно, что шириной запрещенной зоны в полупроводниках, в частности в ZnS, наряду с легированием, можно "управлять" и внешним воздействием (температурой, давлением, облучением ионизирующими излучениями). Изменение структуры (структурных параметров), появление дефектов [8] также могут внести изменения в ширину запрещенной зоны [9], в различные свойства.…”

Section: Introductionunclassified

Структура и свойства облученного электронами ZnS

Ташметов¹,

Мадаминов²,

Исматов³

et al. 2022

УФЖ

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Кристалл ZnS облучали электронами с энергией 2 МэВ и флюенсами от 0.5×1017 электрон/см2 до 1.5×1017 электрон/см2 . Исходная структура ZnS соответствует кубической фазе (пр.гр. F-43m), которая является стабильной при облучении флюенсами электронов до 1.5×1017 электрон/см2 . С увеличением флюенса электронов до 1.5×1017 электрон/см2 наблюдается рост размера кристаллитов с 19.9 нм до 23.1 нм, уменьшение плотности дислокаций с 2.53×1011 cм−2 до 1.87×1011 cм−2 и изменение микронапряжения с 7.11×10−3 до 6.10×10−3. Установлено уменьшение ширины запрещенной зоны монокристалла ZnS при облучении электронами, что связано с ростом размера кристаллитов и изменением параметра решетки. Микротвердость монокристалла ZnS увеличилась на 8% за счет роста размера нанокристаллитов в результате электронного облучения.

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Effect of electron irradiation on structural, morphological and photoluminescence properties of ZnS thin films

Cited by 21 publications

References 16 publications

Impact of Annealing Temperature on the Morphological, Optical and Photoelectrochemical Properties of Cauliflower-like CdSe0.6Te0.4 Photoelectrodes; Enhanced Solar Cell Performance

Impact of Annealing Temperature on the Morphological, Optical and Photoelectrochemical Properties of Cauliflower-like CdSe0.6Te0.4 Photoelectrodes; Enhanced Solar Cell Performance

Effect of electron beam irradiation on EIS and photoelectrochemical performance of electrodeposited nanocrystalline Bi2Te3 thin films

Структура и свойства облученного электронами ZnS

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