Effect of Copper Doping on Physical Properties of Cadmium Oxide Thin Films

Jadhav, Gurunath; Sahare, Sanjay; Desai, Dipti; Bhave, Tejashree M.; Kale, S. N.; Choubey, Ravi Kant

doi:10.1007/978-3-319-29096-6_21

Cited by 4 publications

(6 citation statements)

References 4 publications

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“…The peaks match the standard JCPDS data (05-0640) and confirm the structure of the pure CdO phase with a face-centered cubic crystal structure (Benhaliliba, et al 2012;Chandiramouli and Jeyaprakash 2013;Sahare, et al 2017). It can also be inferred from Figure 1 that the XRD peak intensity of the (111) plane is relatively higher than that of the other reflections, indicating that the CdO films have a preferential growth along the ( 111) direction (Dakhel 2014b;Elttayef, et al 2013;Jadhav, et al 2017;Sahare, et al 2017;Sankarasubramanian, et al 2014). Another interesting point is that Bragg's positions of the diffraction planes shift slightly due to Cu doping (Benhaliliba, et al 2012;Sahare, et al 2017).…”

Section: Structural Characterizationsupporting

confidence: 75%

“…When Cu 2+ is introduced in the lattice site of CdO, it might be easy to diffuse in the host CdO material and easily replaces Cd 2+, causing small voids in the host lattice. This explains the slight shifts in reflections from the Cu doped CdO vis-à-vis the corresponding reflections from the pure CdO films (Benhaliliba, et al 2012;Jadhav, et al 2017;Sahare, et al 2017). However, the absence of any secondary phase in the XRD patterns indicates that Cu 2+ ions are well assimilated in the CdO lattice.…”

Section: Structural Characterizationmentioning

confidence: 88%

“…The optical gap is 2.48 eV for the pure CdO thin film. It show "red-shifts" by 2.42 eV after 1% Cu dopant (Elttayef, et al 2013;Jadhav, et al 2017). It is maybe due to an increase in the average crystallite size (Elttayef, et al 2013).…”

Section: Optical Studymentioning

confidence: 95%

“…Figure 4 represents field emission scanning electron microscopy (FE-SEM) images to provide information about the effect of copper doped on the surface morphology of the thin films. As can be seen, grains are almost uniformly distributed over the surface and they were uniformly and spherically shaped in nature without any cracks and porosity in any of the samples (Jadhav, et al 2017). The average grain size was estimated using FE-SEM images, the results of which can be seen in Table 2.…”

Section: Structural Characterizationmentioning

confidence: 99%

“…However, the optoelectronic properties of CdO thin films need to be adjusted and tailored for many optoelectronic applications. It is possible to engineer the physical properties of cadmium oxide by doping it with different elements like Ni, Fe, Y, In, Sm, Al, F, Ga, W, B, Ni, Mn, Mo, In, Au, Ag, Mn, Eu, Cr, Ti, Sn, Yb, and Cu (Desai 2018;Hymavathi, et al 2017a;Jadhav, et al 2017;Raaif and Mohamed 2017;Sankarasubramanian, et al 2018). It was experimentally observed that it is possible to control the optoelectronic properties of CdO by doping it with different types of metallic ions with ionic radii smaller and/or equal to that of host lattice atoms (Dakhel 2014a;Dakhel and Bououdina 2015;Noorunnisha, et al 2020a).…”

Section: Introductionmentioning

confidence: 99%

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The effect of copper doping on the structural, optical, and electrical properties of cadmium oxide thin films using the spray pyrolysis technique

Davari

Fadavieslam

2021

Preprint

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In this study, the pure and Cu doped CdO thin films with various doping concentrations (0 to 5 at.%) were deposited on soda-lime glass substrates, using the chemical spray pyrolysis technique. The effects of Cu doping on the structural, optical, and electrical properties of thin films were, then, investigated. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy equipped with an energy dispersive x-ray analyzer (FESEM-EDX), atomic force microscopy (AFM), ultraviolet-visible spectroscopy, and electrical resistance; van der Pauw techniques were also used to measure the Hall effect. X-ray diffraction studies showed that the thin films were polycrystalline only with cadmium oxide phase with the cubic face-centered crystal structure and the preferred orientations were along (111), (200), (220), (311), and (311) planes. The FE-SEM and AFM images also showed that with an increase in Cu doping levels, the grain size and surface roughness of the thin films decreased from 472 to 38 nm and from 163 to 54 nm, respectively. The expected element compositions were confirmed by EDX. The optical bandgap of the thin films ranged from 2.42 to 2.56 eV, and as Cu dopant increased, so, too, the optical bandgap. As the Cu doping concentration increased from 0 to 5 (at.%), the electrical resistivity and Seebeck coefficient were found to increase from 3.74⋅10− 4 to 8.77⋅10− 3 Ω.cm and 8.28⋅10− 6 to 2.52⋅10− 5 v/k (at 100 Co temperature difference), respectively; the carrier concentration and carrier mobility were also found to decrease from 3.24⋅1020 to 1.76⋅1020 cm− 3 and from 55.5 to 4.05 cm2/v.s, respectively. The Hall effect and thermoelectric studies revealed that the films exhibited an n-type conductivity.

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