Effect of bismuth deficiency on structure and electrical properties of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics

Xu, Qing; Huang, Yu-Heng; Chen, Min; Chen, Wen; Kim, Bok‐Hee; Ahn, Byung-Kuk

doi:10.1016/j.jpcs.2008.02.009

Cited by 38 publications

(14 citation statements)

References 26 publications

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“…discovered Bi 0.5 Na 0.5 TiO 3 (BNT), it has been considered to be an excellent candidate for lead‐free piezoelectric ceramics. Pure BNT is difficult for poling because of its large coercive field ( E c = 73 kV/cm) and high conductivity . To improve electrical properties, a number of BNT‐based ceramics have been studied extensively, such as BNT‐BaTiO 3 , BNT‐BaTiO 3 ‐BaZrO 3 , BNT‐BaTiO 3 ‐Er 2 O 3 , BNT‐BaTiO 3 ‐K 0.5 Na 0.5 Nb 0.5 , BNT‐Bi 0.5 K 0.5 TiO 3 , BNT‐Bi 0.5 K 0.5 TiO 3 ‐BiAlO 3 , BNT‐Bi 0.5 K 0.5 TiO 3 ‐K 0.5 Na 0.5 NbO 3 , BNT‐MnO 2 , BNT‐SrTiO 3 , and so on.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃Lead‐Free Ceramics

et al. 2015

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0.94(Na0.5Bi0.5+x)TiO3–0.06BaTiO3 (x = −0.04, 0, 0.02; named NB0.46T‐6BT, NB0.50T‐6BT, NB0.52T‐6BT, respectively) lead‐free piezoelectric ceramics were prepared via the solid‐state reaction method. Effects of Bi3+ nonstoichiometry on microstructure, dielectric, ferroelectric, and piezoelectric properties were studied. All ceramics show typical X‐ray diffraction peaks of ABO3 perovskite structure. The lattice parameters increase with the increase in the Bi3+ content. The electron probe microanalysis demonstrates that the excess Bi2O3 in the starting composition can compensate the Bi2O3 loss induced during sample processing. The size and shape of grains are closely related to the Bi3+ content. For the unpoled NB0.50T‐6BT and NB0.52T‐6BT, there are two dielectric anomalies in the dielectric constant–temperature curves. The unpoled NB0.46T‐6BT shows one dielectric anomaly accompanied by high dielectric constant and dielectric loss at low frequencies. After poling, a new dielectric anomaly appears around depolarization temperature (Td) for all ceramics and the Td values increase with the Bi3+ amount decreasing from excess to deficiency. The diffuse phase transition character was studied via the Curie–Weiss law and modified Curie–Weiss law. The activation energy values obtained via the impedance analysis are 0.69, 1.05, and 1.16 eV for NB0.46T‐6BT, NB0.50T‐6BT and NB0.52T‐6BT, respectively, implying the change in oxygen vacancy concentration in the ceramics. The piezoelectric constant, polarization, and coercive field of the ceramics change with the variation in the Bi3+ content. The Rayleigh analysis suggests that the change in electrical properties of the ceramics with the variation in the Bi3+ amount is related to the effect of oxygen vacancies.

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Section: Introductionmentioning

confidence: 99%

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃Lead‐Free Ceramics

et al. 2015

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“…The citrate method is essentially a polymeric precursor method, using citric acid and water as the complex agent and solvent, respectively. Our previous researches have demonstrated the advantages of the citrate method in producing perovskite-type complex oxide systems in terms of desired powder morphology, improved sinterability and enhanced electric properties [15,16]. So far as we know, there are few reports on the sinterability, structure and nonlinear dielectric properties of BST materials derived from the citrate method.…”

Section: Introductionmentioning

confidence: 99%

Effect of sintering temperature on structure and nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics prepared by the citrate method

Zhang

Huang

et al. 2010

Journal of Physics and Chemistry of Solids

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“…32,33 The volatilization of Bi in NKBT thick films can cause a deviation in chemical stoichiometry and defect/domain interaction, which consequently influence the aging behaviors of NKBT thick films. 32,33 The volatilization of Bi in NKBT thick films can cause a deviation in chemical stoichiometry and defect/domain interaction, which consequently influence the aging behaviors of NKBT thick films.…”

Section: Resultsmentioning

confidence: 99%

Piezoelectric and dielectric aging of Bi0.5(Na0.82K0.18)0.5TiO3 lead-free ferroelectric thick films

Zhang

Jiang

Xiao

et al. 2010

Journal of Applied Physics

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Photovoltaic effect of lead-free (Na0.82K0.18)0.5Bi4.5Ti4O15 ferroelectric thin film using Pt and indium tin oxide top electrodesThe dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film Ferroelectric Bi 0.5 ͑Na 0.82 K 0.18 ͒ 0.5 TiO 3 ͑NKBT͒ thick films have been prepared using screen printing on Pt electroded alumina substrates. The room-temperature dielectric constant of resulting 60 m thick NKBT film reaches as high as 823 at 1 kHz and the depolarization temperature, T d , locates at 130°C. The effect of amplitude and frequency of the applied ac field and the aging temperature as well as the Bi excess on the dielectric and piezoelectric aging characteristics are systemically studied. The results show that the dielectric and piezoelectric aging are associated with the reorientation of defect dipoles which stabilized the non-180°domain walls. By this reorientation the domain wall motions are clamped by a time dependent force resulting in the observed decrease in the dielectric and piezoelectric properties during the aging procedural. Moreover, the aging in NKBT thick films exhibits strong frequency dependence, which is caused by that the reorientation and alignment of the defect dipoles with the local polar domains provide a pinning field to the micropolar region, where the regions with larger micropolar volume will experience stronger pinning potential. The NKBT thick films added with 0.5 mol % Bi 2 O 3 exhibit relative lower aging rate of the dielectric constant and piezoelectric coefficient, resulting from the compensation of the Bi 3+ vacancies by the addition of small amount of excess Bi 2 O 3 .

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Effect of bismuth deficiency on structure and electrical properties of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics

Cited by 38 publications

References 26 publications

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃Lead‐Free Ceramics

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃Lead‐Free Ceramics

Effect of sintering temperature on structure and nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics prepared by the citrate method

Piezoelectric and dielectric aging of Bi0.5(Na0.82K0.18)0.5TiO3 lead-free ferroelectric thick films

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Effect of bismuth deficiency on structure and electrical properties of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics

Cited by 38 publications

References 26 publications

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na0.5Bi0.5+x)TiO3–0.06BaTiO3Lead‐Free Ceramics

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na0.5Bi0.5+x)TiO3–0.06BaTiO3Lead‐Free Ceramics

Effect of sintering temperature on structure and nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics prepared by the citrate method

Piezoelectric and dielectric aging of Bi0.5(Na0.82K0.18)0.5TiO3 lead-free ferroelectric thick films

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Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃Lead‐Free Ceramics

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃Lead‐Free Ceramics