Effect of bias voltage on the structure and hardness of TiSiN composite coatings synthesized by cathodic arc assisted middle-frequency magnetron sputtering

Yang, Zhenjun; Yang, Bing; Guo, Liping; Fu, Dejun

doi:10.1016/j.jallcom.2008.06.003

Cited by 30 publications

(8 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, the compressive residual stress increased with an increase in the substrate bias voltage for all the three batches. Therefore, applying a negative bias voltage resulted in a decrease in Si content (Figure 1), which was attributed to the ion bombardment and resputter effect [26]. All the films prepared at a substrate bias voltage above −100 V exhibited a negligible Si content of 0.3–0.4 atom %.…”

Section: Resultsmentioning

confidence: 99%

“…The ion bombardment peening affected the residual stress and hardness [24]. Moreover, it induced complete phase separation of the nanocomposite M–Si–N films [25] and resputtered the light Si adatoms [26]. In this study, the residual stress of Zr–Si–N films was fabricated through the HiPIMS-RFMS hybrid process, which was increased to 8.8 GPa in compression by applying a substrate bias voltage of −150 V. The effects of substrate bias voltage on the chemical compositions, phase structures, and mechanical properties of Zr–Si–N films were investigated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

et al. 2019

View full text Add to dashboard Cite

Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and negative bias voltage levels of 0–150 V connected to the substrate holder. Applying a negative bias voltage on substrates enhanced the ion bombardment effect, which affected the chemical compositions, mechanical properties, and residual stress of the Zr–Si–N films. The results indicated that Zr–Si–N films with Si content ranging from 1.4 to 6.3 atom % exhibited a high hardness level of 33.2–34.6 GPa accompanied with a compressive stress of 4.3–6.4 GPa, an H/E* level of 0.080–0.107, an H3/E*2 level of 0.21–0.39 GPa, and an elastic recovery of 62–72%.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Bias sputtering increased the kinetic energy of charged ions, which enhanced the mobility of sputtered species and resulted in re-sputtering and atomic peening [26][27][28]. The re-sputtering of light adatoms could affect the atomic compositions of M-Si-N films [29,30]. Therefore, this study investigated variations in the mechanical properties and wear resistance of sputtered W-N and W-Si-N films by adjusting the nitrogen flow ratio and substrate bias.…”

Section: Introductionmentioning

confidence: 99%

Effects of the Nitrogen Flow Ratio and Substrate Bias on the Mechanical Properties of W–N and W–Si–N Films

et al. 2020

View full text Add to dashboard Cite

The reactive gas flow ratio and substrate bias voltage are crucial sputtering parameters for fabricating transition metal nitride films. In this study, W–N films were prepared using sputtering with nitrogen flow ratios (f) of 0.1–0.5. W–N and W–Si–N films were then prepared using an f level of 0.4 and substrate bias varying from 0 to −150 V by using sputtering and co-sputtering, respectively. The variations in phase structures, bonding characteristics, mechanical properties, and wear resistance of the W–N and W–Si–N films were investigated. The W–N films prepared with nitrogen flow ratios of 0.1–0.2, 0.3, and 0.4–0.5 displayed crystalline W, amorphous W–N, and crystalline W2N, respectively. The W–N films prepared using a nitrogen flow ratio of 0.4 and substrate bias voltages of −50 and −100 V exhibited favorable mechanical properties and high wear resistance. The mechanical properties of the amorphous W–Si–N films were not related to the magnitude of the substrate bias.

show abstract

“…The nanostructured Ti-Si-N coating fabricated by PVD or CVD method have attracted greatly due to their high hardness of (up to 50 GPa) [20,21], thermal stability up to 800 0 C [22] and excellent corrosion resistance [23]. With the introduction of Si into TiN, the hardness increased and the grain size decreased dramatically [20].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Microstructure Characterization of Ti-Base Different Metal Nitrides by Mechanical Alloying: A Brief Review

Bhaskar¹,

Pradhan²

2019

IJRAT

View full text Add to dashboard Cite

The nanocrystalline Ti-base metal nitrides having cubic structure Ti 0.9 M 0.1 N (M= Al, C, B, Ni, Si) were synthesized at room temperature by mechanical alloying the ingredients powder materials under a nitrogen environment. The stoichiometric Ti 0.9 M 0.1 N (cubic) phase initiated after 1h of milling and formed completely after 5h to 9h of milling depending upon the nature of doping materials. Microstructures of all ball-milled samples were characterized by analyzing the respective XRD patterns employing the Rietveld structure and microstructure refinement method. Microstructures of the prepared materials were also characterized by TEM micrograph to correlate the results obtained from the XRD pattern analysis. The effects of inclusion of different intermediate solute materials on the microstructure of the prepared materials were studied in this review article.

show abstract

Effect of bias voltage on the structure and hardness of TiSiN composite coatings synthesized by cathodic arc assisted middle-frequency magnetron sputtering

Cited by 30 publications

References 25 publications

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Effects of the Nitrogen Flow Ratio and Substrate Bias on the Mechanical Properties of W–N and W–Si–N Films

Preparation and Microstructure Characterization of Ti-Base Different Metal Nitrides by Mechanical Alloying: A Brief Review

Contact Info

Product

Resources

About