Effect of back gate biasing in negative capacitance field effect transistor

Broadband and Flexible Photodiode of a Bromine-Doped Lateral MoTe2 Homojunction

“…There are various effects of negative back-gate voltage. 81,82 One of them is its ability to increase the built-in potential of the p−n junction. The Fermi level in the MoTe 2 material can be pushed toward the valence band edge by using a negative back-gate voltage, which can increase the builtin potential of the p−n junction.…”

“…Photodetector measurements were taken at different gate voltages ( V g = −20 V, V g = 0 V V g = +20 V), and the highest current value was achieved at V g = −20 V under 365, 530, and 850 nm-wavelength laser light, respectively, as shown in Figure (a–c). There are various effects of negative back-gate voltage. , One of them is its ability to increase the built-in potential of the p–n junction. The Fermi level in the MoTe 2 material can be pushed toward the valence band edge by using a negative back-gate voltage, which can increase the built-in potential of the p–n junction.…”