ˇ-FeSi 2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi 2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of ˇ-FeSi 2 films. XRD spectra reveal that the amorphous FeSi 2 films are transformed to ˇ-FeSi 2 phase as the annealing temperature is increased from 500 to 900 ı C for 5 min and the optimal annealing temperature is 900 ı C. The formation of ˇ-FeSi 2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between ˇ-FeSi 2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the ˇ-FeSi 2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 10 5 cm 1 and the optical band-gap of the ˇ-FeSi 2 film is 0.88 eV. The ˇ-FeSi 2 film with high crystal quality is fabricated by co-sputtering a FeSi 2 target and a Si target for 60 min and annealing at 900 ı C for 5 min.