Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode

Fabrication and electrical characterization of Au/p-Si/STO/Au contact

“…Such type of behavior is best described by thermionic emission theory. According to this theory, current in such device could be expressed as [9] …”

Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures

“…In several organic/inorganic Schottky diode studies [21][22][23][24][25], modification of the electronic parameters of the diodes by using various organic materials have been demonstrated. Nicollian and Brews suggested that the interface state density properties of the diodes can be determined using conductance technique [26].…”

The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

“…It is clearly seen that there is a relatively large difference between the values of n obtained from the forward-bias ln I-V and the dV/d (ln I)-I plots. This can be attributed to the effect of the R s and nature of bias voltage [7]. The value of n obtained from the slope of ln I-V plot corresponds to intermediate bias voltages, while that obtained from dV/d(ln I)-I plots corresponds to high bias voltages.…”

“…In addition, these organic materials are started to be used as interfacial layer between metal and semiconductor (M/S) for the purpose of modifying their electrical and photoelectrical parameters [4][5][6][7][8][9]. The use of such organic interfacial layer in MS type Schottky barrier diodes (SBDs) converts them into metal-polymer-semiconductor (MPS) type SBDs.…”