Effect of Al doping on the visible photoluminescence of ZnO nanofibers

Effect of pressure and Al doping on structural and optical properties of ZnO nanowires synthesized by chemical vapor deposition

“…2b and c plot I uv and I g as a function of Al concentration. Note the decrease in I g with increasing Al concentration for samples grown at both pressures, confirming a recent report by Liu et al on Al:ZnO nanofibers [19]. Clearly the addition of Al reduces the number of oxygen vacancies as it slows the longitudinal growth rate of the nanowires.…”

“…This green emission band, which is generally associated with oxygen vacancy defect levels and can be stronger than band edge emission in ZnO nanostructures [4][5][6]14], is mediated by energy transfer from bound excitons [15]. The strength of the green emission band in ZnO has also been reported to be significantly affected by Al doping [2,3,[16][17][18][19][20]. By increasing the Al concentration in Al:ZnO nanofibers, Liu et al [19] have observed a decrease in the green emission intensity but no change in the UV emission intensity.…”

“…The strength of the green emission band in ZnO has also been reported to be significantly affected by Al doping [2,3,[16][17][18][19][20]. By increasing the Al concentration in Al:ZnO nanofibers, Liu et al [19] have observed a decrease in the green emission intensity but no change in the UV emission intensity. In studies of Al-doped ZnO films, Sharma et al [20] found a decrease in green emission compared to the band edge emission, plus a reduction in the grain size that caused nonradiative recombination to increase as the surface to volume ratio increased.…”

A study of structural, optical and magnetic properties of Zn0.97−xCuxCr0.03O diluted magnetic semiconductors

“…In succession, further theoretical calculation has been carried on the ZnO doped with Cr, V, Fe, Ni and Co and predicted that they should exhibit ferromagnetic properties [3]. Both experimental results and theoretical calculations revealed that different transition metal ions and carrier concentration in the ZnO based DMSs would strongly influence their properties [4][5][6][7][8][9][10][11][12][13][14].…”

Thermal stability of electrical properties of ZnO:Al films deposited by room temperature magnetron sputtering

“…As a direct band gap semiconductor, ZnO has band energy of more than 3.3 eV and more than 60 meV of exciton binding energy [1][2][3][4]. Because of its tremendous application potentials, various forms of ZnO such as powder [5,6], flake [7,8], film [9,10], nanorod [11], nanowire [12] and so on, have been extensively investigated.…”