EAM-integrated DFB laser modules with more than 40-GHz bandwidth

Kawanishi, Hidekazu; Yamauchi, Y.; Mineo, N.; Shibuya, Y.; Mural, H.; Yamada, Koji; Wada, Hiroshi

doi:10.1109/68.942658

Cited by 75 publications

(24 citation statements)

References 3 publications

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“…For comparison, reference samples with the common MQW-MQW coupling technique [7][8][9] were also prepared. The material structures of both the LD section and EAM section of the reference samples are the same as those of the MQW-bulk-MQW coupled devices, except that the reference samples do not contain the thin etching stop InP layer.…”

Section: Article In Pressmentioning

confidence: 99%

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Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

Cheng

Pan

Liu

et al. 2007

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 99%

“…So far, a few groups have fabricated the integrated devices successfully using the method which is generally realized by a growth-etch-regrowth (MQW-MQW) butt-coupling technique [7][8][9][10]. For integrated devices to get high optical coupling efficiency, the buttjoint waveguide wall needs to be both vertical and smooth.…”

Section: Introductionmentioning

confidence: 99%

Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

Cheng

Pan

Liu

et al. 2007

Journal of Crystal Growth

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“…Especially, a 40-Gb/s electroabsorption modulator-integrated distributed feedback (DFB) laser (EML) module has attracted much attention because it is suitable for high-speed optical telecommunication systems with its low packaging cost, high modulation frequencies, low insertion loss, low operating voltage, etc., [2], [3].…”

Section: Introductionmentioning

confidence: 97%

Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules

Yun

Choi

Kwon

et al. 2008

IEEE Trans. Adv. Packag.

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We have developed 40-Gb/s traveling-wave electroabsorption-modulator-integrated distributed feedback laser (TW-EML) modules using several advanced technologies. First, we have adopted a selective area growth (SAG) method in the fabrication of the 40-Gb/s EML device to provide active layers for the laser and the electroabsorption modulators (EAMs) simultaneously. The fabricated device shows that the measured 3-dB bandwidth of electrical-to-optical (E/O) response reaches about 45 GHz and the return loss ( 11 ) is kept below 10 dB up to 50 GHz. For the module design of the device, we mainly considered electrical and optical factors. The measured S 11 of the fabricated 40 Gb/s TW-EML module is below 10 dB up to about 30 GHz and the 3-dB bandwidth of the E/O response reaches over 35 GHz. We also have developed two types of coplanar waveguide (CPW) for the application of the driver amplifier integrated 40 Gb/s TW-EML module, which is a system-on-package (SoP) composed of an EML device and a driver amplifier device in a module. The measured 11 of the two-step-bent CPW is below 10 dB up to 35 GHz and the measured 11 of the parallel type CPW is below 10 dB up to 39 GHz.

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“…High-speed optoelectronic devices such as electroabsorption (EA) modulator are key components for the next generation 40 Gb/s optical communication system [1]. In the fabrication of high-speed optoelectronic devices, one of the key issues is feeding highfrequency microwave signals to the chips.…”

Section: Introductionmentioning

confidence: 99%

Resonance Suppression of Grounded Coplanar Waveguide in Submount for 40 Gb/s Optoelectronic Modules

Sun

Xiong

et al. 2008

J Infrared Milli Terahz Waves

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It is a key issue in optoelectronic modules to feed high-frequency microwave signals to device chips with low loss and reflection. In our work, microwave resonances in frequency response of 40 Gb/s optoelectronic modules are suppressed through theoretical and experimental optimization. Such resonances due to microstrip-like modes of grounded coplanar waveguide (GCPW) severely degrade the performance of optoelectronic devices. The resonances can be suppressed by introducing metal-walled via holes in GCPW submount. The diameter and the spacing of the via holes are optimized to be 0.2 mm and 0.8 mm, respectively. An electroabsorption modulated laser (EML) module with over 30 GHz modulation bandwidth has been demonstrated without obvious high frequency resonances.

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EAM-integrated DFB laser modules with more than 40-GHz bandwidth

Cited by 75 publications

References 3 publications

Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules

Resonance Suppression of Grounded Coplanar Waveguide in Submount for 40 Gb/s Optoelectronic Modules

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