2002
DOI: 10.1016/s0039-6028(02)02143-x
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Dynamics of step fluctuations on Pd() surface as observed by STM

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Cited by 8 publications
(4 citation statements)
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“…Many defects, which are due to missing Pd atoms as a result of the depth 0.13 -0.17 nm, are seen. 14) The number of defects increased when the cooling after annealing was faster than ca. 10 K s À1 .…”
Section: Resultsmentioning
confidence: 99%
“…Many defects, which are due to missing Pd atoms as a result of the depth 0.13 -0.17 nm, are seen. 14) The number of defects increased when the cooling after annealing was faster than ca. 10 K s À1 .…”
Section: Resultsmentioning
confidence: 99%
“…Dynamic STM measurements on clean metal surfaces revealed the dynamics of step edges. Atoms detach from a step edge, diffuse around on the terrace and get trapped at a different place. Mobility of surface atoms is expected at the temperatures used, as the Hüttig temperature of cobalt is ∼530 K, and heating to 630 K was sufficient to anneal the surface after sputtering. By taking this into account, we can speculate how this would play a role during graphene growth.…”
Section: Discussionmentioning
confidence: 99%
“…Scaling of the correlation function with z=2 (or equivalently, scaling of Fourier mode decay time with the square of wave number [8-10, 12-14,16-17]) has been observed in experiment for Si(111) [8,15] at elevated temperatures, for Si(001) in two distinct temperature regimes [16,17], for the corrugated metal surfaces Au(110) [18] and Mo(011) [10] at elevated temperature and Pd (110) [19] at room temperature, and for…”
Section: G T X Y T T X Y Tmentioning
confidence: 99%
“…Scaling of the correlation function with z=2 (or equivalently, scaling of Fourier mode decay time with the square of wave number [8-10, 12-14,16-17]) has been observed in experiment for Si(111) [8,15] at elevated temperatures, for Si(001) in two distinct temperature regimes [16,17], for the corrugated metal surfaces Au(110) [18] and Mo(011) [10] at elevated temperature and Pd (110) [19] at room temperature, and for Si(111) with a 3 3 × R30˚ overlayer of Al at elevated temperature [20]. It is rather surprising that the z=3 signature of terrace diffusion for isolated steps (or short wavelength fluctuations) has scarcely ever been seen.…”
Section: G T X Y T T X Y Tmentioning
confidence: 99%