Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

Lazić, S.; Espinha, André; Pinilla, Sergio; Gibaja, Carlos; Zamora, Félix; Ares, Pablo; Chhowalla, Manish; Paz, Wendel S.; Palacios, J. J.; Hernández-Mínguez, A.; Santos, P. V.; Meulen, H.P. van der

doi:10.1038/s42005-019-0217-6

Cited by 42 publications

(38 citation statements)

References 43 publications

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“…Recently, h‐BN is found as a natural hyperbolic material [ 12,13 ] and piezoelectric material, [ 14 ] which exhibits some novel optical and electromechanical properties. [ 12–14 ] These unique properties enable itself as a candidate for practical usages in hyperlenses, [ 12,13 ] near‐field imaging, [ 15 ] deep‐UV emitters [ 16 ] and detectors, [ 17 ] quantum optoelectronics, [ 18 ] nonlinear and stretchable optics [ 14 ] (Figure 1).…”

Section: Introductionmentioning

confidence: 99%

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

et al. 2020

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Atomically thin hexagonal boron nitride (h‐BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D‐material‐based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h‐BN is found to be a natural hyperbolic material in the mid‐infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h‐BN flakes at their proof‐of‐concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large‐scale, high‐quality, atomically thin h‐BN films and heterostructures. Herein, CVD synthesis of atomically thin h‐BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single‐crystal h‐BN film. Meanwhile, epitaxial growth of 2D materials onto h‐BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h‐BN and its heterostructures in optoelectronics and electronics are summarized.

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Section: Introductionmentioning

confidence: 99%

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

et al. 2020

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“…These defects can confine electronic levels within the bandgap, acting as recombination centers, causing SP light emission. Lazić et al [103] observed patterns of PL peaks spanning across a spectral band of ≈900 meV for each location on the sample. In this example, the PL peaks are centered at 2.067 (≈600 nm), 2.090 (593 nm) and 2.155 eV (575 nm), here labeled as ZPL 1 , ZPL 2 , and ZPL 3 , respectively.…”

Section: H-bn Optical Point Defects and Spssmentioning

confidence: 99%

“…An alternative method to achieve spectral tuning can be based on the use of acoustic-mechanical effects induced by radio frequency (RF) surface acoustic waves (SAW) [103,140]. h-BN flakes were transferred onto a lithium niobate (LiNbO 3 ) crystal with two interdigital transducers.…”

Section: Spectral Study and Control Of Spssmentioning

confidence: 99%

“…The SAW-induced hydrostatic strain is transferred from LiNbO 3 to the h-BN flakes because of their high elastic response and increases with increasing SAW amplitude, resulting in the ZPL tuning of SPEs in h-BN. In [103] SAWs were applied to linearly polarized SPEs in the h-BN grains. The ZPL wavelengths and their emission time can be simultaneously controlled in situ by the strain induced by the propagating acoustic waves.…”

Section: Spectral Study and Control Of Spssmentioning

confidence: 99%

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Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

Castelletto

Inam

Sato

et al. 2020

Beilstein J. Nanotechnol.

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Single-photon sources and their optical spin readout are at the core of applications in quantum communication, quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide) with proven single-photon emission from the visible to infrared, a quantum spin–photon interface, and ancilla qubits, it is expected that other material platforms could emerge with similar characteristics in the near future. These two materials also naturally lead to monolithic integrated photonics as both are good photonic materials. While so far the verification of single-photon sources was based on discovery, assignment and then assessment and control of their quantum properties for applications, a better approach could be to identify applications and then search for the material that could address the requirements of the application in terms of quantum properties of the defects. This approach is quite difficult as it is based mostly on the reliability of modeling and predicting of color center properties in various materials, and their experimental verification is challenging. In this paper, we review some recent advances in an emerging material, low-dimensional (2D, 1D, 0D) hexagonal boron nitride (h-BN), which could lead to establishing such a platform. We highlight the recent achievements of the specific material for the expected applications in quantum technologies, indicating complementary outstanding properties compared to the other 3D bulk materials.

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“…First studies have already shown that SAWs can be used to cause energy modulations of the optical transition. [184,185] They could also be implemented in recently fabricated hBN phononic wave guides. [186] It was also proposed theoretically how a selective phonon-assisted optical excitation of the color center could be used to deterministically create LO phonon states which change the PL spectrum.…”

Section: Artificial Atoms In Layered Materialsmentioning

confidence: 99%

Remote Phonon Control of Quantum Dots and Other Artificial Atoms

2021

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To exploit the full potential of chips for quantum technologies, it is worth considering all possible opportunities offered by the solid state. The aspect covered in this article is the use of phononic fields to remotely influence the optical properties of artificial atoms. The three most commonly used strain sources are discussed, that is, mechanical resonators, surface acoustic waves, and picosecond acoustic pulses. All three platforms are routinely interfaced with quantum dots and other qubits in basic research, which renders a first step toward large scale implementation in quantum applications. A central question regarding the interaction between lattice oscillations and the optically active artificial atoms deals with the characteristic time scales of the two components. The influence of this aspect on the expected optical response on the phononic driving is discussed. Besides well known semiconducting quantum dots and color centers that typically operate in the visible spectral range, the more recently discovered artificial atoms in layered van der Waals materials are discussed. Due to their flexibility and robustness, these crystals promise vast opportunities for future applications. Another important building block lies in superconducting qubits that allow to resonantly generate quantum phonon states and therefore establish the field of quantum acoustics.

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Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

Cited by 42 publications

References 43 publications

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

Remote Phonon Control of Quantum Dots and Other Artificial Atoms

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