Drain Current DLTS of AlGaN–GaN MIS-HEMTs

Okino, Takashi; Ochiai, M.; Ohno, Yutaka; Kishimoto, Shigeru; Maezawa, Koichi; Mizutani, Takashi

doi:10.1109/led.2004.832788

Cited by 62 publications

(34 citation statements)

References 11 publications

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“…Fig. 4 shows the Arrhenius plot of these time constants for both Device A and B, resulting in an activation energy around 0.69-0.7 eV, which is similar with the reported data, i.e., 0.74 eV [9], 0.66 eV [20], and 0.62 eV [21]. Though Joh et al [9] and Bae et al [20] mentioned that this trap could be at the surface or inside the AlGaN barrier, Okina et al [21] found an extra trap 0.62 eV in AlGaN MIS-HEMTs with a SiN x gate dielectric in comparison with AlGaN Schottky HEMT.…”

Section: Introductionsupporting

confidence: 85%

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Marcon

Ronchi

et al. 2015

Solid-State Electronics

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Section: Introductionsupporting

confidence: 85%

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Marcon

Ronchi

et al. 2015

Solid-State Electronics

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“…The deep energy levels with such value of activation energy were in literature assigned to the family of threading dislocations [17] and carbon intersticial defects [18]. The energy response 0.50 eV (probably corresponding with the presence of Fe dopant [12]) and 0.69 eV (corresponding with surface emission [16]) were identified only in Sample B, but the presence of these levels in Sample A are also expected.…”

Section: Resultsmentioning

confidence: 79%

Defects in schottky diodes based on AlGaN/GaN heterostructures

Stuchlíková

Kósa

Benkovska

et al. 2014

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The correlation between deep levels observed on different structure types is discussed. 1.

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“…Figure 12 shows the measured DLTS signal of the AlGaN/GaN MIS-HEMT. 22 There are two electron traps, E T1 , and E T2 . The activation energies for E T1 and E T2 were 0.49 eV and 0.62 eV, respectively.…”

Section: Drain Current Dlts Of Mis-hemtsmentioning

confidence: 99%

Characterization of transient behavior of AlGaN/GaN HEMTs

Mizutani

2007

SPIE Proceedings

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We have studied transient behavior of AlGaN/GaN high electron mobility transistors (HEMTs) using various kinds of measurement techniques such as frequency dispersion of the drain conductance, low-frequency noise, drain current DLTS, and Kelvin probe force microscopy. It has been shown that the frequency dispersion has a correlation with the low-frequency noise. In order to study the transient behavior of the device in more detail, the drain current DLTS was applied to various types of HEMTs. Even though electron-trap-related negative peaks were observed for all types of devices, surface-states-related positive peaks were observed only for devices without Si 3 N 4 passivation film. It has been shown by KFM measurement that the surface potential of the device which was subjected to the gate bias stress increased with time due to the emission of electrons which were captured at the surface states. These phenomena are consistent with the current collapse model where the collapse is caused by the electrons which are injected from the gate electrode and captured at the surface states.

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Drain Current DLTS of AlGaN–GaN MIS-HEMTs

Cited by 62 publications

References 11 publications

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Defects in schottky diodes based on AlGaN/GaN heterostructures

Characterization of transient behavior of AlGaN/GaN HEMTs

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