Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis

Tamersit, Khalil; Djeffal, F.

doi:10.1109/jsen.2016.2550492

Cited by 115 publications

(39 citation statements)

References 37 publications

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“…The International Technology Roadmap for Semiconductors in its document 'Beyond CMOS' published in 2015 reported the emerging devices based on structure or materials and charge/non-charge entity [4]. This include a number of devices like nanowire FET [5][6][7], carbon nanotube FET [8][9][10], graphene FET [11][12][13], TFET [14][15][16], spin FET [17][18][19] and negative gate capacitance FET [20,21]. Of these devices, TFETs have gained concentrated focus for low power applications due to their fundamental fabrication methodologies being similar to MOSFETs, and their ability to achieve sub-60 mV/dec subthreshold swing and lower off currents than MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Dielectric-Modulated TFETs as Label-Free Biosensors

Goswami¹,

Bhowmick²

2018

Design, Simulation and Construction of Field Effect Transistors

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This chapter presents tunnel field effect transistors (TFETs) as dielectric-modulated (DM) label-free biosensors, and discusses various aspects related to them. A brief survey of the dielectric-modulated TFET biosensors is presented. The concept of dielectric modulation in TFETs is discussed with focus on principle and design perspectives. A Technology Computer Aided Design (TCAD) based approach to incorporate embedded nanogaps in TFET geometries along with appropriate physics-based simulation models are mentioned. Non-ideal conditions in dielectric-modulated biosensors are brought to light, keeping in view the practical considerations of the devices. A gate engineered TFET is taken up for analysis of sensitivities under different conditions through TCAD simulations. Finally, a status map of the sensitivities of the most significant works in dielectric-modulated label-free biosensors is depicted, and the status of the proposed TFET is highlighted.

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Section: Introductionmentioning

confidence: 99%

Dielectric-Modulated TFETs as Label-Free Biosensors

Goswami¹,

Bhowmick²

2018

Design, Simulation and Construction of Field Effect Transistors

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“…Recently, numerous structural and material designs of TFETs have been proposed with an objective to achieve improvement in subthreshold swing (SS) and off current. A few of them are bandgapengineered TFETs [3], graphene nanoribbon TFETs [4], gate-engineered TFET [5], and strained silicon-germanium TFETs [6]. Double-gate TFET [7], dual-material gate TFET [8], hetero-gate dielectric TFET [9], and heterojunction TFETs [10] have also been investigated for improved electrical parameters of TFET.…”

Section: Introductionmentioning

confidence: 99%

Band Gap Modulated Tunnel FET

Bhowmick¹,

Goswami²

2018

Design, Simulation and Construction of Field Effect Transistors

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This chapter presents bandgap-modulated tunnel field effect transistor (TFET) and discusses its simulation and modeling. A geometry of TFET, the heterojunction TFET, is considered, and different electrical parameters are discussed using Technology Computer Aided Design (TCAD) tool. The effect of the heterojunction on the characteristics is observed through the variations in the length and mole fraction of the pocket layer adjacent to the source. An analytical model is further presented for gate-drain underlap TFET using 2-D Poisson equation and Kane's interband tunneling model. The results are validated with the output from the TCAD tool.

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“…2, in [17]. By the DNA molecular analysis more than 400 diseases are directly diagnosable and the number is growing rapidly [17].…”

Section: Introductionmentioning

confidence: 99%

“…2, in [17]. By the DNA molecular analysis more than 400 diseases are directly diagnosable and the number is growing rapidly [17]. This makes the DNA detection increasingly important in many fields of science and DNA hybridization is considered as basic concept in most DNA detection techniques.…”

Section: Introductionmentioning

confidence: 99%