Superlattices and Microstructures volume 41, issue 5-6, P414-418 2007 DOI: 10.1016/j.spmi.2007.03.031 View full text
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F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin

Abstract: We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.