MRS Proc. 2000 DOI: 10.1557/proc-610-b3.5 View full text
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Nobutoshi Aoki, Toshitake Yaegashi, Yuji Takeuchi, Makoto Fujiwara, Naoki Kusunoki, Tsutomu Sato, Ichiro Mizushima, Yoshitaka Tsunashima, Hiroaki Hazama, Seiichi Aritome, Riichiro Shirota, Takashi Shimizu

Abstract: AbstractWe found an anomalous behavior of dopant diffusion in Si substrate during the oxynitride process. SIMS measurements showed a notably enhanced diffusion during the NO and N2O oxynitride process. The considerably enhanced diffusion was also observed in re-oxidation of oxynitride film grown by the NO annealing or NH3 nitridation of a SiO2 film. In order to simulate the enhanced diffusion, an enhancement coefficient was introduced, showing that the simulation results are in reasonable agreement with the ex…

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