2006
DOI: 10.1063/1.2194870
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Donor and acceptor competitions in phosphorus-doped ZnO

Abstract: Phosphorus-doped ZnO films were grown by molecular-beam epitaxy with a GaP effusion cell as dopant source. Three growth regions were identified to obtain ZnO films with different conduction types. In the oxygen-extremely-rich region, phosphorus-doped ZnO films show n-type conduction with dominant donor-bound excitons (DX0) in the low-temperature photoluminescence (PL) spectra. In the oxygen-rich region, a growth window was found to generate p-type ZnO films. The PL spectra show evident competitions between DX0… Show more

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Cited by 98 publications
(59 citation statements)
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“…The resulting nonstoichiometry is known to strongly influence the electronic properties through upward band-bending effects and the creation of active surface sites [14,15]. It is also relevant to mention here the amphoteric properties of ZnO which influence both its chemical behavior [16] and its electronic properties upon doping [17]. Furthermore, ZnO has interesting optical properties, due to its direct band-gap of 3.3 eV and a large binding exciton binding energy of 60 meV.…”
Section: Homentioning
confidence: 99%
“…The resulting nonstoichiometry is known to strongly influence the electronic properties through upward band-bending effects and the creation of active surface sites [14,15]. It is also relevant to mention here the amphoteric properties of ZnO which influence both its chemical behavior [16] and its electronic properties upon doping [17]. Furthermore, ZnO has interesting optical properties, due to its direct band-gap of 3.3 eV and a large binding exciton binding energy of 60 meV.…”
Section: Homentioning
confidence: 99%
“…Относительно природы поло-сы 374 nm (3.31 eV) в литературе нет единого мнения. Энергетическое положение полосы позволяет связы-вать ее с несколькими излучательными процессами, в частности, с излучением 1LO-свободного экситона [1], с переходом свободный электрон−акцептор [13][14][15], с излучением связанных экситонов, в локализованных на акцепторе [16,17] с двухэлектронными процессами в излучении связанных экситонов [18] и др. Поло-са наблюдается в широком температурном интервале от гелиевых до комнатных температур.…”
Section: рисunclassified
“…24,34,35 The 3.31 eV emission band commonly observed in undoped and doped ZnO has been suggested as being related to SFs, 36 but also been reported to be attributed to various electron-acceptor pair and exciton transitions. [37][38][39][40] Most reports of p-type ZnO have been for group V elements including N, 41-44 P, 45,46 As, [47][48][49] and Sb 50,51 dopants. The low temperature (LT) PL of the p-type samples utilizing these dopants includes emissions in the energy range of 3.3-3.35 eV.…”
Section: Introductionmentioning
confidence: 99%