Domain wall conductivity in KTiOPO4 crystals

Abstract

We study the local ionic conductivity of ferroelectric domain walls and domains in KTiOPO4 single-crystals. We show a fourfold increase in conductivity at the domain walls, compared to that of the domains, attributed to an increased concentration of defects. Our current-voltage measurements reveal memristive-like behavior associated with topographic changes and permanent charge displacement. This behavior is observed for all the voltage sweep-rates at the domain walls, while it only occurs for low frequencies at the domains. We attribute these findings to the redistribution of ions due to the applied bias and their effect on the tip-sample barrier.

Giant Domain Wall Conductivity in Self‐Assembled BiFeO3 Nanocrystals

“…This complexity adds a new dimension to nanoengineering conductive domain walls and implies greater potential to tune the functions on a device level. As domain wall conductivity finds its universality in ferroelectric materials (to name a few, Pb(Zr 0.2 Ti 0.8 )O 3 , [ 13 ] BaTiO 3 , [ 9 ] KTiOPO 4 , [ 10 ] YMnO 3 , [ 8,64 ] ErMnO 3 , [ 11 ] and LiNbO 3 [ 12 ] ), it would be interesting to see if similar enhancement of domain wall conductivity can be achieved in those materials through nanocrystal constructions as in BiFeO 3 , which thus would further the development of domain‐wall‐based nanoelectronics.…”

“…This complexity adds a new dimension to nanoengineering conductive domain walls and implies greater potential to tune the functions on a device level. As domain wall conductivity finds its universality in ferroelectric materials (to name a few, Pb(Zr 0.2 Ti 0.8 )O 3 , [13] BaTiO 3 , [9] KTiOPO 4 , [10] YMnO 3 , [8,64] ErMnO 3 , [11] and LiNbO 3 [12] ), it would be interesting to see if similar enhancement of domain wall conductivity can be achieved in those materials through The domain patterns in the nanocrystals could be manipulated by an electric field within a perpendicular architecture, resulting in a concurrent engineering of domain walls conductivity. These discrete structures are highly desired for perpendicular prototype devices construction; thus meeting the increasing demand of electronic devices with ultrahigh-density data storage, low power consumption, and minimized scale.…”

“…This creates new opportunities for future electronic, spintronic, and optoelectronic devices. [6] Intriguingly, the discovery of enhanced domain wall conductivity relative to the bulk in BiFeO 3 [7] and many other proper/improper ferroelectrics [8][9][10][11][12][13][14][15][16] in the last decade gives rise to a brand new field of applications, such as domain wall memory. [17,18] As memory cells, domain walls allow for enhanced package density due to scale shrinkage, and are more stable during repeated reading/writing compared to existing domain-based ferroelectric memories.…”

Frequency-dependent decoupling of domain-wall motion and lattice strain in bismuth ferrite

“…This plays a role in influencing its macroscopic properties in a far more diverse and important manner than so far considered. Domain wall conductivity has been observed in numerous ferroelectric materials in addition to BiFeO 3 2 , 35 , including BaTiO 3 crystals 36 , KTiOPO 4 crystals 37 , YMnO 3 single crystals 38 , 39 , ErMnO 3 crystals 40 , LiNbO 3 single crystals 41 , and Pb(Zr 0.2 Ti 0.8 )O 3 thin films 42 . It would be interesting to see if those materials can also show the same frequency-dependent decoupling between the lattice and non-180° domain wall motion generated strain as in BiFeO 3 .…”

Functional Ferroic Domain Walls for Nanoelectronics

“…Since initial reports of domain wall conduction in WO 3 [29] and BiFeO 3 (BFO) [30,31], the phenomenon has been observed in a range of materials systems such as uniaxial ferroelectrics [28,32,33,34,35] (LiNbO 3 ; Pb(Zr/Ti)O 3 ; LiTaO 3 ; BaTiO 3 , KTiOPO 4 ), multiferroics and improper ferroelectrics [36,37,38,39] ( R MnO 3 , R : Er, Y, Dy, Lu; (Ca,Sr) 3 Ti 2 O 7 ; Cu 3 B 7 O 13 Cl), and magnetic systems [40,41]. Domain walls in ferroelectrics or multiferroics are characterized by the angle between polarization vectors in neighboring domains and their charge state.…”