DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

Gelczuk, Ł.; Dąbrowska-Szata, M.; Pucicki, D.

doi:10.12693/aphyspola.126.1195

Cited by 5 publications

(3 citation statements)

References 17 publications

(20 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results strongly suggest that post-growth annealing clearly influences the electrical properties of the GaNAs layers grown at low temperatures (566°C in our case) by means of APMOVPE technique. Both the electron and hole traps were also observed in undoped GaNAs/GaAs triple quantum well structures after annealing [21]. Finally, in the present study we correlated the positive DLTS signal with the existence of only electron traps in the as-grown and undoped GaNAs/GaAs heterostructures grown by APMOVPE.…”

Section: Methodssupporting

confidence: 71%

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Gelczuk

Dąbrowska-Szata

Ściana

et al. 2016

Materials Science-Poland

View full text Add to dashboard Cite

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

show abstract

Section: Methodssupporting

confidence: 71%

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Gelczuk

Dąbrowska-Szata

Ściana

et al. 2016

Materials Science-Poland

View full text Add to dashboard Cite

show abstract

“…indicate that with increasing t p , the peaks do not shift significantly toward lower temperatures. Based on this and on previous papers [25][26][27][28][29][30][31][32][33][34][35][36], we suggest that E1 and E3 originate from point defect located near dislocations, rather than from a dislocation core.…”

Section: Capture Kineticssupporting

confidence: 74%

“…The most probable physical origin of trap E1 is As vacancies (V As ) or the antisite defect As Ga as reported in [25]. The investigation of the signature of E2 led us to hypothesize that it is associated with the oxygen related center EL3 (oc-O As ) [26][27][28][29][30][31]. The signature of trap E3 was found to be similar to a well-known GaAs native defect called EL2, that corresponds to an As antisite defect As Ga [25,29,[31][32][33][34][35].…”

Section: Arrhenius Plot Comparisonmentioning

confidence: 86%

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Zenari¹,

Buffolo²,

Santi³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The aim of this paper is to identify, analyze and compare the defects present in III-As, as a function of dislocation density, and as a function of the presence/absence of quantum dots (QDs). Such materials are of fundamental importance for the development of lasers and photodiodes for silicon photonics. The study is based on an extensive deep-level transient spectroscopy investigation, carried out on GaAs pin diodes grown on Si and on GaAs (that differ in the dislocation density), with and without embedded QDs. The original results described in this paper demonstrate that: (a) we were able to identify four different defects within the device grown on Si (three electron and one hole traps) and one defect (hole trap) in the device on GaAs, common to both samples; (b) all the majority carrier traps identified are located near midgap, i.e. are efficient non-radiative recombination centers; (c) such defects are absent (or non-detectable) in the sample grown on GaAs substrate, having a very low dislocation density; (d) the presence of QDs does not result in additional defects within the semiconductor material; (e) the analysis of the capture kinetics revealed that two of the identified traps are related to point defects, whereas the other two traps can be associated with point defects located near a dislocation; (f) a comparison with previous reports indicate that the detected traps are related to native III-As defects, or to oxygen-related complexes.

show abstract

Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy

Gelczuk

Stokowski

Dąbrowska-Szata

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Deep-level defects were investigated by deep level transient spectroscopy on the as-grown and annealed GaNAs layers of various nitrogen (N) contents. The unintentionally doped (uid) GaNAs layers were grown by metalorganic vapor phase epitaxy with N = 1.4%, 2.0%, 2.2%, and 2.4% on GaAs substrate. The possible origin and evolution of the deep-level defects upon annealing were analyzed with the use of the GaNAs band gap diagram concept [Kudrawiec et al., Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of donor traps decreases with N-related downward shift of the conduction band. On the basis of this diagram and in comparison with previous results, the N-related traps were associated with (N−As)As or (N−N)As split interstitials. It was also proposed that one of the electron traps and the hole trap, lying at the same level position in the bandgap of the annealed uid-GaNAs layers, can both act as one generation-recombination center partially responsible for poor optical properties of this alloy.

show abstract

DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

Cited by 5 publications

References 17 publications

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy

Contact Info

Product

Resources

About