Distributed Feedback Laser Diodes Emitting at 894 nm Suitable for Atomic Clock Applications Fabricated Using Nanoimprint Lithography

Narrow linewidth laterally-coupled 1.55 [micro sign]m DFB lasers fabricated using nanoimprint lithography

“…The soft and flexible stamp accommodates locally to micro-particle presence [3] and enables large area imprinting even for wafer surfaces with curvatures caused by the internal strain of the epitaxial layers. This fabrication technique is easily applicable to different material systems; we have used it before for GaAs [3,4] and GaSb [5]. In this Letter, we present results of the first InP-based LC-RWG DFB lasers based on UV-NIL.…”

“…Design and fabrication: The fabrication process used for the InP-based lasers is similar to that we have previously reported for NIL-processed GaAs-based LC-RWG DFB lasers emitting at 894 nm [4] and 980 nm [3] and GaSb-based LC-RWG DFB lasers emitting at 1945 nm [5]. We have improved the coupling of the optical field to the surface gratings by adjusting the LC-RWG layout.…”

InGaAs ridge-waveguide distributed Bragg reflector laser with first-order grating fabricated by nanoimprint lithography

“…In the fabrication of these lasers, NIL using a UV-curable polymer (UV-NIL) was employed for fabricating the firstorder DFB grating with a period of 220-240 nm for a lasing wavelength of 1.50-1.55 µm 2,4,6) and the second-order laterally coupled DFB grating with a period of 180 nm for a lasing wavelength of 894 nm. 7) As another method of NIL, roomtemperature NIL (RT-NIL), which does not require UV irradiation or thermal treatment during imprinting, has been reported. 8) In this work, we demonstrated a 980-nm-band InGaAs quantum-well (QW) ridge-waveguide DBR laser with a 151-nm-period first-order surface grating fabricated by RT-NIL.…”