Dissociative ionization of silane by electron impact

Basner, R.; Schmidt, Martin; Tarnovsky, V.; Becker, K.; Deutsch, Hans‐Peter

doi:10.1016/s0168-1176(97)00063-3

Cited by 58 publications

(54 citation statements)

References 31 publications

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“…The partial ionization cross sections of SiH 4 have been taken from Ref. 36. Information about ionization cross sections for SiH x radicals has been only recently available from work by Tarnovsky, Deutsch, and Becker who determined ionization cross sections for SiD x radicals.…”

Section: A H 2 Flow Seriesmentioning

confidence: 99%

Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon

Kessels

Sanden

Schram

2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The SiH4 dissociation products and their contribution to hydrogenated amorphous silicon (a-Si:H) film growth have been investigated in a remote Ar–H2–SiH4 plasma which is capable of depositing device-quality a-Si:H at 10 nm/s. SiH3 radicals have been detected by means of threshold ionization mass spectrometry for different fractions of H2 in the Ar–H2-operated plasma source. It is shown that at high-H2 flows, SiH4 dissociation is dominated by hydrogen abstraction and that SiH3 contributes dominantly to film growth. At low-H2 flows, a significant amount of very reactive silane radicals, SiHx(x⩽2), is produced, as concluded from threshold ionization mass spectrometry on SiH2 and optical emission spectroscopy on excited SiH and Si. These radicals are created by dissociative recombination reactions of silane ions with electrons and they, or their products after reacting with SiH4, make a large contribution to film growth at low-H2 flows. This is corroborated by the overall surface reaction probability which decreases from ∼0.5 to ∼0.3 with increasing H2 fraction. The film properties improve with increasing H2 flow and device-quality a-Si:H is obtained at high H2 fractions where SiH3 dominates film growth. Furthermore, it is shown that at high-H2 flows the contribution of SiH3 is independent of the SiH4 flow while the deposition rate varies over one order of magnitude.

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Section: A H 2 Flow Seriesmentioning

confidence: 99%

Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon

Kessels

Sanden

Schram

2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…(1b),(1c)) ionization of SiH y molecules by electron impact have been subject of several experimental [19,20,21,22] and theoretical [23,24] studies. Most extensively has been studied the e + SiH 4 collision system, for which the partial cross sections for six dissociative ionization channels have been measured in the energy range from threshold to 400 eV [19] and to 100 eV [22]. In the overlapping energy range, the partial cross sections of Refs.…”

Section: Electron-impact Ionization Of Sih Y (I Di)mentioning

confidence: 99%

“…[20] for this molecule, however, is smaller by 30 -40 % in the energy region above 40 eV than those of Refs. [19] and [22]. For the collision systems e + SiH y , (y = 1 − 3), only the partial cross sections for the direct (→ SiH + y + 2e) and dominant dissociative channel (→ SiH + y−1 + H + 2e) have been measured in the energy range from threshold to 200 eV [21].…”

Section: Electron-impact Ionization Of Sih Y (I Di)mentioning

confidence: 99%

“…As mentioned at the beginning of this sub-section, partial cross sections for six individual ionization channels of SiH 4 were measured in [19,20,22]. The sensitivity of experimental technique employed in Ref.…”

Section: Electron-impact Ionization Of Sih Y (I Di)mentioning

confidence: 99%

“…[21] were performed for SiD y , (y = 1 − 3), but the ionization process does not exhibit an isotope effect.) It is important to note that in all cross sections measurement experiments on SiH 4 [19,20,22], the parent ionization channel (SiH 4 → SiH The main electron-impact ionization channels of SiH y molecules are shown in Table 2. The values of threshold energy (E th ), average electron energy loss (E (−) el ) and mean total kinetic energy (E K ) for each ionization channel, calculated by using Eqs.…”

Section: Electron-impact Ionization Of Sih Y (I Di)mentioning

confidence: 99%

See 2 more Smart Citations

Collision processes of Hydride species in Hydrogen plasmas: III. The Silane family

Janev

Reiter

2003

Contrib. Plasma Phys.

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Theoretical study of positron scattering by group 14 tetra hydrides: A quantum mechanical approach

Sinha

Singh

Antony

2018

Int J of Quantum Chemistry

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The present work provides a comprehensive set of positron impact scattering cross sections for group 14 tetrahydrides, namely, SiH4, GeH4, SnH4, and PbH4. The well‐established spherical complex optical potential and complex scattering potential‐ionization contribution methods are modified to incorporate positron scattering in the present work to calculate various cross sections. The positronium formation channel is adequately included through an improved inelastic threshold. The energy range chosen for the direct ionization cross section is from the respective ionization potential (I) of the molecule to 5 keV. Likewise, positronium formation and total ionization cross sections are reported from the positronium formation threshold to 300 eV and 5 keV, respectively, and the total cross section is computed for an extensive energy range of 1 eV to 5 keV. The positron impact total cross section for stannane molecule is computed for the first time. A characteristic valley is observed in the total cross sections with minima close to the positronium formation threshold. Further increase of cross section signifies the opening of inelastic channels especially positronium formation. In general, a reasonable agreement is found between the present results and other comparisons, wherever available. Furthermore, this is the first report of the inelastic cross sections (direct ionization, positronium formation, and total ionization) for the present set of targets.

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Dissociative ionization of silane by electron impact

Cited by 58 publications

References 31 publications

Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon

Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon

Collision processes of Hydride species in Hydrogen plasmas: III. The Silane family

Theoretical study of positron scattering by group 14 tetra hydrides: A quantum mechanical approach

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