Dispersion behaviour of laser-synthesized silicon carbide nanopowders in ethanol for electrophoretic infiltration

Coupé, Aurélie; Maskrot, Hicham; Buet, E.; Renault, A.; Fontaine, Pauline; Chaffron, L.

doi:10.1016/j.jeurceramsoc.2012.05.022

Cited by 22 publications

(8 citation statements)

References 48 publications

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“…The pristine sample shows a broad peak with a maximum at 102.4 eV in the Si 2p spectra, which consists of contributions of the different Si species in an oxycarbide. In principle, it was shown before that peaks ranging from ≈100 eV (SiC 4 groups) to ≈103 eV (SiO 4 ) can be expected . In our case, we had previously shown that for the material used in the present study, predominantly SiO 3 C and SiO 4 groups are present in the Si oxycarbide .…”

Section: Resultssupporting

confidence: 58%

“…Liu et al reported such a reaction upon lithiation of a silicon oxycarbide composite . However, the formation of larger amounts of SiC 4 moieties can be ruled out, since these should lead to a peak at ≈100 eV in the Si 2p spectra . Importantly, there is no indication for Na–Si alloy formation, which should give rise to a peak at ≈99 eV in the Si 2p spectra.…”

Section: Resultsmentioning

confidence: 99%

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Study of the Na Storage Mechanism in Silicon Oxycarbide—Evidence for Reversible Silicon Redox Activity

et al. 2018

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Silicon‐based compounds are interesting candidate anode materials but show only relatively low electrochemical performances with sodium. Controversial reports are available about the electrochemical interaction between Na and silicon, which encourage to investigate the mechanism in a silicon‐based material in detail. This study reports the results of a systematic investigation of the electrochemical sodium ion storage in silicon oxycarbide (SiCO) using ex situ X‐ray photoelectron spectroscopy and magic‐angle spinning nuclear magnetic resonance spectroscopy. Comparison of pristine and hydrofluoric acid‐etched silicon oxycarbide shows that the silicon oxycarbide is active itself, but not by an alloying process. Instead, results reveal an irreversible structural change and amorphization of SiCO upon the initial sodium uptake and support the existence of reversible insertion‐based reactions in the subsequent cycles.

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Section: Resultssupporting

confidence: 58%

Section: Resultsmentioning

confidence: 99%

Study of the Na Storage Mechanism in Silicon Oxycarbide—Evidence for Reversible Silicon Redox Activity

et al. 2018

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“…Si C bond of SiC is located at 100.2 eV for both spectra. While Si O C environment (between 101.5 and 102.4 eV depending on the number of O and C atoms in Si neighborhood [34,35]) is the only configuration that can be observed for SiC-C sample, a second Si O configuration related to SiO 2 (103.3 eV) is encountered for S-SiC sample. This latter contribution is weak but confirmed by RMS goodness-of-fit value that appears better with Si O contribution than without (760 instead of 798).…”

Section: Powdermentioning

confidence: 95%

Effects of carbon and oxygen on the spark plasma sintering additive-free densification and on the mechanical properties of nanostructured SiC ceramics

Lanfant

Leconte

Bonnefont

et al. 2015

Journal of the European Ceramic Society

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“…Si–C powder is consisted of amorphous Si, C, and β‐SiC crystallites with 10‐20 nm in size. C–C bond of the commercial SiC powder is predominantly present as a turbostratic layer on the surface . However, in Si–C system, free carbon layer showing turbostratic structure was not obviously observed on the surface by HR‐TEM (Figure C).…”

Section: Resultsmentioning

confidence: 97%

Dispersion and densification of nano Si–(Al)–C powder with amorphous/nanocrystalline bimodal microstructure

Yoon

Lee

2018

J Am Ceram Soc

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The dispersion behavior and densification of nano Si–(Al)–C powder with amorphous/nanocrystalline bimodal microstructure were investigated. The Si–C powders synthesized by a mechanical alloying (MA) process had a near‐spherical shape with an average particle size of 170 nm. A solid loading of 62 vol% was achieved using polyethyleneimine (PEI) as a dispersant. The optimum dispersant amount was 1 wt% based on zeta potential, sedimentation, and viscosity analysis data. The high zeta potential value (73 mV) compared with that of the commercially available SiC (65 mV) was caused by modified surface properties and consequent promotion of the cationic dispersant adsorption. A Si–Al–C slurry containing 6.5 wt% of sintering additives with a solid loading of 60 vol% was also prepared. The relative density of the dried Si–Al–C slurry was 63.3% without additional compaction, which could be densified at 1650°C at a pressure of 20 MPa using a spark plasma sintering furnace.

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Dispersion behaviour of laser-synthesized silicon carbide nanopowders in ethanol for electrophoretic infiltration

Cited by 22 publications

References 48 publications

Study of the Na Storage Mechanism in Silicon Oxycarbide—Evidence for Reversible Silicon Redox Activity

Study of the Na Storage Mechanism in Silicon Oxycarbide—Evidence for Reversible Silicon Redox Activity

Effects of carbon and oxygen on the spark plasma sintering additive-free densification and on the mechanical properties of nanostructured SiC ceramics

Dispersion and densification of nano Si–(Al)–C powder with amorphous/nanocrystalline bimodal microstructure

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