Dislocation Scattering in GaN

Look, David C.; Sizelove, J. R.

doi:10.1103/physrevlett.82.1237

Cited by 447 publications

(314 citation statements)

References 24 publications

Supporting

Mentioning

283

Contrasting

Unclassified

Order By: Relevance

“…20 A possible explanation for the decrease in electron mobility with decreasing carrier concentration can be found in Weimann et al where edge type threading dislocations in c-plane oriented GaN are considered to be lines of deepacceptor-like traps which are populated by donated electrons, thus producing charged lines that act as scattering centers. 21,22 Their model, which matches reasonably well with experimental results from c-plane oriented samples, results in a large amount of Si concentration dependent compensation which is qualitatively similar to that shown in Fig. 9 and in a decrease in electron mobility with decreasing free electron concentration below ϳ10 18 cm −3 due to reduced screening of line charges.…”

Section: Si-doped M-gansupporting

confidence: 77%

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

McLaurin

Mates

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

Plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC is demonstrated. Phase-pure, m-plane GaN films exhibiting a large anisotropy in film mosaic ͑ϳ0.2°full width at half maximum, x-ray rocking curve scan taken parallel to ͓1120͔ versus ϳ2°parallel to ͓0001͔͒ were grown on m-plane SiC substrates. Maximum hole concentrations of ϳ7 ϫ 10 18 cm −3 were achieved with p-type conductivities as high as ϳ5 ⍀ −1 cm −1 without the presence of Mg-rich inclusions or inversion domains as viewed by cross-section transmission electron microscopy. Temperature dependent Hall effect measurements indicate that the Mg-related acceptor state in m-plane GaN is the same as that exhibited in c-plane GaN. Free electron concentrations as high as ϳ4 ϫ 10 18 cm −3 were measured in the Si-doped m-plane GaN with corresponding mobilities of ϳ500 cm 2 / V s measured parallel to the ͓1120͔ direction.

show abstract

Section: Si-doped M-gansupporting

confidence: 77%

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

McLaurin

Mates

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…It was argued that, in the case of low dopant concentrations, dislocation scattering dominates whereas impurity scattering becomes significant at high carrier concentration due to screening of the dislocation charge. [31][32][33] Therefore, the slight difference in plasmon damping in the Ga-and N-face domains can be explained by differences in threading dislocation density.…”

Section: Resultsmentioning

confidence: 99%

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Park

Cuomo

Rodriguez

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

PublicationThe electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon-plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.

show abstract

“…However, to get a rough estimate of p versus dislocation density, we simply assumed a single valence band, with an associated hole effective mass of 2.0m 0 , and then followed the treatment of Ref. 9. The results are presented in the inset of Fig.…”

Section: Lϭͱd ͑1͒mentioning

confidence: 99%

Electron beam and optical depth profiling of quasibulk GaN

Chernyak

Osinsky

Nootz

et al. 2000

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Electron beam and optical depth profiling of thick (5.5–64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM.

show abstract

Dislocation Scattering in GaN

Cited by 447 publications

References 24 publications

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Electron beam and optical depth profiling of quasibulk GaN

Contact Info

Product

Resources

About