Dislocation line charge screening within n-type gallium nitride

Baghani, Erfan; O’Leary, Stephen K.

doi:10.1063/1.4773835

Cited by 5 publications

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The actual screening space-charge distribution corresponding to n-type GaN was determined using the procedure outlined by Baghani and O'Leary. 43 lines within n-type InN; see Figure 1(a) of Baghani and O'Leary. 36 In analogy with the Read model approximation, we propose approximating these actual screening spacecharge distributions within n-type InN by exponential functions of the general form n sc ðrÞ ' n 0 expðÀr=kÞ; (3) where r represents the radial distance from the dislocation core in cylindrical coordinates, n 0 denotes the value that the approximate screening space-charge distribution assumes at the dislocation line core, and k can be viewed as an effective screening length.…”

Section: Approximating the Screening Space-charge Distribution Wimentioning

confidence: 99%

Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride

Baghani

O’Leary

2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Recent density functional calculations by Kalesaki et al. [Appl. Phys. Lett. 98, 072103 (2011)] and by Takei and Nakayama [J. Cryst. Growth 311, 2767 (2009)] have shown that the 5/7-atom dislocation core structure possesses a donor character within intrinsic wurtzite InN. In the present work, we relax the assumption that wurtzite InN is intrinsic and obtain the occupation statistics of the different possible ionization states of the 5/7-atom dislocation defect sites as a function of the bulk doping concentration. An underlying Gibbs factor formalism, similar to that applied earlier to the problem of obtaining the occupation statistics of the dislocation defect sites within n-type gallium nitride, has been employed for the purposes of the present analysis. The occupation statistics results of this analysis suggest that dislocation line densities below 1010 cm−2 are necessary in order to achieve bulk free electron concentrations lower than 1017 cm−3 within wurtzite InN. Our occupation statistics results are shown to be consistent with existing electron mobility measurements from the literature.

show abstract

Section: Approximating the Screening Space-charge Distribution Wimentioning

confidence: 99%

Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride

Baghani

O’Leary

2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes

Singh

Ghosh

2015

Journal of Elec Materi

View full text Add to dashboard Cite

A transition in the nature of the occupancy of the dislocation lines within n-type wurtzite gallium nitride

Baghani

O’Leary

2013

Journal of Applied Physics

View full text Add to dashboard Cite

Within the framework of the model of Read [Philos. Mag. 45, 775 (1954)], we examine the occupancy of the dislocation lines within n-type wurtzite gallium nitride. In particular, we examine the transition that occurs as the bulk doping concentration is increased, from the depletion limit to the non-depletion limit. We note that an abrupt transitional bulk doping concentration can be defined. The dependence of this transitional bulk doping concentration on the dislocation line density is then determined. We note that existing theoretical results on the occupation statistics of the threading dislocation lines within wurtzite gallium nitride also exhibit such a transition. Since these theoretical results assume different structures for the core of the threading dislocation lines, we conclude that this transition between the depletion and non-depletion domains should be a universal feature, holding true irrespective of the particular structure being assumed for the core of the threading dislocation lines. Conditions under which this abrupt transition smoothens are also discussed.

show abstract

Dislocation line charge screening within n-type gallium nitride

Abstract: Articles you may be interested inA transition in the nature of the occupancy of the dislocation lines within n-type wurtzite gallium nitride

Cited by 5 publications

References 28 publications

Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride

Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride

Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes

A transition in the nature of the occupancy of the dislocation lines within n-type wurtzite gallium nitride

Contact Info

Product

Resources

About