Direct Visualization of Electric-Field-Induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Murthy, Akshay A.; Stanev, Teodor K.; Reis, Roberto dos; Hao, Shiqiang; Wolverton, Christopher; Stern, Nathaniel P.; Dravid, Vinayak P.

doi:10.1021/acsnano.9b06581

Cited by 26 publications

(36 citation statements)

References 54 publications

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“…[ 16 ] The detailed role of lattice point defects in the memristive I – V characteristics of MoS 2 devices can likely be revealed by atomically resolved in situ scanning tunneling microscopy [ 17 ] or scanning transmission electron microscopy. [ 8a,18 ]…”

Section: Dual‐gated Mos2 Memtransistor Characteristicsmentioning

confidence: 99%

Dual‐Gated MoS₂ Memtransistor Crossbar Array

Lee

Sangwan

Rojas

et al. 2020

Adv Funct Materials

109

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Memristive systems offer biomimetic functions that are being actively explored for energy-efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D semiconductors enable unique gatetunable responses including the recent realization of hybrid memristor and transistor devices known as memtransistors. In particular, monolayer MoS 2 memtransistors exhibit nonvolatile memristive switching where the resistance of each state is modulated by a gate terminal. Here, further control over the memtransistor neuromorphic response through the introduction of a second gate terminal is gained. The resulting dual-gated memtransistors allow tunability over the learning rate for non-Hebbian training where the long-term potentiation and depression synaptic behavior is dictated by gate biases during the reading and writing processes. Furthermore, the electrostatic control provided by dual gates provides a compact solution to the sneak current problem in traditional memristor crossbar arrays. In this manner, dual gating facilitates the full utilization and integration of memtransistor functionality in highly scaled crossbar circuits. Furthermore, the tunability of long-term potentiation yields improved linearity and symmetry of weight update rules that are utilized in simulated artificial neural networks to achieve a 94% recognition rate of handwritten digits.

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Section: Dual‐gated Mos2 Memtransistor Characteristicsmentioning

confidence: 99%

Dual‐Gated MoS₂ Memtransistor Crossbar Array

Lee

Sangwan

Rojas

et al. 2020

Adv Funct Materials

109

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“…Defects are not limited to vacancies, as adatoms also play a role in the transformation of these materials [105] . Furthermore, observation of electrically‐biased layered materials has revealed the formation of channels due to atom migration at grain boundaries [108] . The role of defects in these transformations warrants careful consideration when investigating transformations in materials being irradiated with the electron beam even when using electron energies below the knock‐on threshold.…”

Section: Structural and Chemical Transformations In Layered Chalcogenmentioning

confidence: 99%

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

et al. 2021

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Layered metal chalcogenide materials, such as MoS2 and Bi2Te3, have found important applications as 2D materials in emerging electronic devices. To create nanoscale layered chalcogenide materials with precisely controlled structures and properties, it is critical to understand and control how they evolve and transform under various conditions. This Minireview presents an overview of recent research focused on using in situ characterization to understand the atomic‐scale details of transformations during growth, under exposure to reactive chemical and thermal environments, and on interfacing with other materials. These efforts have used techniques including in situ transmission electron microscopy (TEM), X‐ray spectroscopy, and optical methods to understand nanoscale transformations. These in situ studies have provided a substantially improved understanding of transformation mechanisms in layered chalcogenide materials, which is an important step toward the use of these interesting materials in a variety of electronic and electrochemical devices.

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“…Recently, in situ STEM methods have been used to directly visualize and manipulate the atomic arrangements in 2D materials during heating (Fig. 5(b)) [46], laser/electron-beam irradiation [47,48], and in an electrical field [49] to understand the evolution of heterogeneities during exposure to external stimuli. The ever-expanding capabilities for high-resolution data acquisition as well as an exponential increase in the size and quality of data sets produced during microscopy and spectroscopy experiments require the development of machine learning methods to extract critical information from atomically resolved images including the precise locations of atomic species, dopants, and defects in 2D materials.…”

Section: Stem Imaging and Spectroscopymentioning

confidence: 99%

Heterogeneities at multiple length scales in 2D layered materials: From localized defects and dopants to mesoscopic heterostructures

Cai

Lin

et al. 2020

Nano Res.

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Two-dimensional (2D) materials hold great promise for applications in optoelectronics, quantum information science, and energy conversion due to their remarkable properties imbued by their physical characteristics. Although heterogeneities in their intrinsic structure are the major challenges limiting their synthesis and predictable properties, they also provide a pathway to controllably tune the properties and broaden the potential of 2D materials. Heterogeneities that can be tailored, including defects, dopants, strain, edges, and layer stackings offer transformative opportunities in heterogeneous 2D materials through the introduction of novel properties for technological applications. This article provides a review of recent progress in studying heterogeneities in 2D materials. The review uses examples from our work to develop a strategy to understand the heterogeneities across multiple length scales to link the effect of heterogeneity at the nanoscale with the macroscale properties of 2D materials. We describe specific types of heterogeneities and explore novel synthesis and processing methods for their controlled production with example of the potential impact and applications enabled by their intriguing properties. Finally, we provide a perspective on how to extend the range of tunable properties through further engineering the heterogeneities in 2D materials.

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Direct Visualization of Electric-Field-Induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Abstract: Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable

Cited by 26 publications

References 54 publications

Dual‐Gated MoS₂ Memtransistor Crossbar Array

Dual‐Gated MoS₂ Memtransistor Crossbar Array

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

Heterogeneities at multiple length scales in 2D layered materials: From localized defects and dopants to mesoscopic heterostructures

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Direct Visualization of Electric-Field-Induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Abstract: Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable

Cited by 26 publications

References 54 publications

Dual‐Gated MoS2 Memtransistor Crossbar Array

Dual‐Gated MoS2 Memtransistor Crossbar Array

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

Heterogeneities at multiple length scales in 2D layered materials: From localized defects and dopants to mesoscopic heterostructures

Contact Info

Product

Resources

About

Dual‐Gated MoS₂ Memtransistor Crossbar Array

Dual‐Gated MoS₂ Memtransistor Crossbar Array