MRS Proc. 2000 DOI: 10.1557/proc-624-87 View full text
Russell E. Hollingsworth, William C. Bradford, Mary K. Herndon, Joseph D. Beach, Reuben T. Collins

Abstract: ABSTRACTPractical methods for directly patterning hydrogenated amorphous silicon (a-Si:H) films have been developed. Direct patterning involves selectively oxidizing the hydrogen passivated aSi:H surface, with the oxide then serving as an etch mask for subsequent hydrogen plasma removal of the unoxidized regions. Photo induced oxidation has been extensively studied using both far field projected patterns and near field scanning optical microscopy (NSOM) for direct write patterning. Examination of the threshold…

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