Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy

Deleruyelle, Damien; Dumas, C.; Carmona, M.; Müller, Christophe; Spiga, S.; Fanciulli, M.

doi:10.1143/apex.4.051101

Cited by 20 publications

(17 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[24] The large lateral extension of the conductive protrusion with respect to the contact area between the tip and the sample surface (which can be estimated around few tens of nanometer-square [21]) can be related to the water meniscus formed around the AFM tip placed under atmospheric conditions. [25].…”

mentioning

confidence: 99%

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Deleruyelle

Putero

Ouled-Khachroum

et al. 2013

Solid-State Electronics

View full text Add to dashboard Cite

This paper shows that the well-know chalcogenide Ge 2 Sb 2 Te 5 (GST) in its amorphous state may be advantageously used as solid electrolyte material to fabricate Conductive-Bridge Random Access Memory (CBRAM) devices. GST layer was sputtered on preliminary inkjet-printed silver lines acting as active electrode on either silicon or plastic substrates. Whatever the substrate, the resistance switching is unambiguously attested at a nanoscale by means of conductive-atomic force microscopy (C-AFM) using a Pt-Ir coated tip on the GST surface acting as a passive electrode. The resistance change is correlated to the appearance or disappearance of concomitant hillocks and current spots at the surface of the GST layer. This feature is attributed to the formation/dissolution of a silver-rich protrusion beneath the AFM tip during set/reset operation. Beside, this paper constitutes a step toward the elaboration of crossbar memory arrays on flexible substrates since CBRAM operations were demonstrated on W/GST/Ag crossbar memory cells obtained from an heterogeneous fabrication process combining physical deposition and inkjet-printing.

show abstract

mentioning

confidence: 99%

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Deleruyelle

Putero

Ouled-Khachroum

et al. 2013

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…High-resolution conductive PtIr-coated tips were used at low voltage to detect local changes in resistivity while highly robust conductive boron-doped diamond tips were used to induce local switching. 18,19 The experiments were conducted in standard atmosphere where the use of negative tip biases could lead to oxide regrowth on the NiO surface. Therefore, only positive voltages were applied to the CAFM tip to avoid anodic oxidation of the sample surface.…”

Section: Cafm Samples and Setupmentioning

confidence: 99%

“…The roughness in the W-plug region is significantly higher than the surrounding flat SiO 2 area. 19 The central 0.6 Â 0.6 lm 2 depressed region, lying 20-30 nm below the surrounding area, is due to the dishing of W-plug during the chemical mechanical polishing (CMP) next to the via hole metal filling step. 16 Following the topographic scanning shown in Fig.…”

Section: Forming Characteristicsmentioning

confidence: 99%

Switching of nanosized filaments in NiO by conductive atomic force microscopy

Nardi

Deleruyelle

Spiga³

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics J. Appl. Phys. 112, 074114 (2012) Investigation of nonuniformity phenomenon in nanoscale SiO2 and high-k gate dielectrics J. Appl. Phys. 112, 064119 (2012) Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl.Resistive switching in binary metal oxides consists of conductivity changes originating from the electrical creation/dissolution of conductive filaments (CFs) at nanoscale. The investigation of CF local properties can only be achieved through physical and electrical studies at the scale of 10 nm or less, that is, the characteristic size of CFs. This work reports on the direct manipulation of individual CFs formed through insulating NiO films by conductive atomic force microscopy (CAFM) and the comparison between forming/reset processes induced by CAFM and those observed in large-area devices with the same NiO film. The switching variability due to local defects, such as grain boundaries and dislocations, is directly evidenced by CAFM during electroforming process. Our results also indicate that the forming voltage under CAFM can be significantly smaller than the one observed in large-area devices, thus providing evidence for the electric-field enhancement underneath the CAFM tip. Filament deactivation, or reset, at extremely low currents close to 100 nA is demonstrated and described in terms of electrode-limited CF. These results suggest that device engineering and CF size limitation may allow for a significant reduction of forming voltage and reset current in resistive switching random-access memory switching. V C 2012 American Institute of Physics. [http://dx.

show abstract

“…В связи с этим была поставлена задача экспериментального исследования локальных электрофизических свойств ультратонких диэлектрических полимерных пленок методом атомно-силовой микроскопии (АСМ) с проводящим зондом. Эта методика позволяет производить одновременное картографирование морфологии поверхности и регистрацию электрических неоднородностей в XXV Международный симпозиум " Нанофизика и наноэлектроника" 1561 пленке полимера [10,11]. Предполагалось выяснить, существуют ли изначально в полимерном слое какие-либо особенности, благоприятствующие протеканию тока при резистивном переключении, или перенос заряда начинается в результате внешнего воздействия на полимер.…”

Section: Introductionunclassified

Визуализация Проводящих Каналов В Полимерных Слоях Методом Атомно-Силовой Микроскопии С Проводящим Зондом

Корнилов¹,

Лачинов²,

Юсупов³

2021

Журнал Технической Физики

View full text Add to dashboard Cite

The results of an experimental study of the local electrophysical properties of ultrathin polymer films by atomic force microscopy with a conducting probe are presented. It is established that visualization of current flow sites (conducting channels) is possible in areas from which the surface layer has been mechanically removed. The conducting channels in the current image have the form of individual points with a height corresponding to the locally flowing current. It is found that the location of the observed channels correlates well with the model of conductivity along the grain boundaries of the supramolecular structure of the polymer.

show abstract

Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy

Cited by 20 publications

References 26 publications

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Switching of nanosized filaments in NiO by conductive atomic force microscopy

Визуализация Проводящих Каналов В Полимерных Слоях Методом Атомно-Силовой Микроскопии С Проводящим Зондом

Contact Info

Product

Resources

About