Direct measurement for SOI and bulk diodes of single-event-upset charge collection from energetic ions and alpha particles

Aton, T.; Seitchik, J.A.; Joyner, K.; Houston, T.W.; Shichijo, H.

doi:10.1109/vlsit.1996.507808

Cited by 1 publication

(2 citation statements)

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“…These neutrons, with a small probability, interact with silicon nuclei. The resulting events, while few in number, each have a large probability of causing an error [35]- [37]. The recoiling heavy ions generate a large number of electronhole pairs over a short path.…”

Section: Dynamic Random Access Memoriesmentioning

confidence: 99%

“…An experiment has been carried out using fluorine ion, which produces a track charge density more than half that of silicon ions and about ten times that of -particles (He ions) near the silicon surface, as shown in Fig. 11 [37]. Collected charges are measured using diodes formed from the inner and outer diffusion of a ring transistor, with the collection nodes monitored by source-follower transistors.…”

Section: Dynamic Random Access Memoriesmentioning

confidence: 99%

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SOI for digital CMOS VLSI: design considerations and advances

Chuang

Anderson

1998

Proc. IEEE

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This paper reviews the recent advances of silicon-on-insulator (SOI) technology for complementary metal-oxide-semiconductor (CMOS) very-large-scale-integration memory and logic applications. Static random access memories (SRAM's), dynamic random access memories (DRAM's), and digital CMOS logic circuits are considered. Particular emphases are placed on the design issues and advantages resulting from the unique SOI device structure. The impact of floating-body in partially depleted devices on the circuit operation, stability, and functionality are addressed. The use of smart-body contact to improve the power and delay performance is discussed, as are global design issues.

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Section: Dynamic Random Access Memoriesmentioning

confidence: 99%

Section: Dynamic Random Access Memoriesmentioning

confidence: 99%