Direct Identification of Surface Bound MoO₃ on Single MoS₂ Flakes Heated in Dry and Humid Air

Deterministic Thermal Sculpting of Large‐Scale 2D Semiconductor Nanocircuits

“…The measured Δ CPD map characterized by 200 mV contrast at the MoS 2 –SiO 2 interface allows to quantify the work function of the MoS 2 nanopaths as $${\phi _{Mo{S_2}}} \approx 5.25eV$$, calculated considering the value of SiO 2 work function (≈ 5.05 eV), in good agreement with respect to recent reports. [ 59–61 ]…”

“…, calculated con sidering the value of SiO 2 work function (≈ 5.05 eV), in good agreement with respect to recent reports. [59][60][61] In order to show the potential of the 2DTMDs nanocir cuits as active optoelectronic interconnects, we devise a simple ultrathin device thanks to the noninvasive tSPL approach. High quality metallic contact can be precisely aligned onto the nanocircuits by exploiting the peculiar in situ imaging and real time nanolithography capabilities (i.e., direct overlay method), avoiding undesired damage and contamination for the fragile layers.…”