Direct current conductivity and thermally stimulated current of β-nickel phthalocyanine films using gold and aluminium electrodes

Abdel‐Malik, T. G.

doi:10.1080/00207219208925582

Cited by 44 publications

(9 citation statements)

References 13 publications

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“…Using µ p values, equation (3) yields p 0a (amorphous) and p 0p (polycrystalline) in the ohmic regions (Table 2). In the square law region where I-V characteristic is controlled only by the shallow level, the current is given by [33] …”

Section: Space-charge-limited Current (Sclc)mentioning

confidence: 99%

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Viswanathan

Senthilkumar

Sriranjini

et al. 2005

Cryst. Res. Technol.

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Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T sb = 30°, 400°C). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400°C). The polycrystalline films were found to have a hexagonal lattice. Compositions of these films have been characterized by EDAX and the surface analysis by scanning electron microscopy. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range (300 -1100 nm), were explained in terms of substrate temperatures. Films formed at room temperature showed an optical band gap (E g opt ) 1.56 eV; where as the films formed at 400°C were found to have a E g opt of 1.92 eV. The increase in the value of E g opt with T sb treatment is interpreted in terms of the density of states model as proposed by Mott and Davis. The analysis of current -Voltage characteristics, based on space charge limited currents (SCLC) measurements, confirms the exponential decrease of density of states from the conduction band edge towards the Fermi level for both the amorphous and polycrystalline films.

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Section: Space-charge-limited Current (Sclc)mentioning

confidence: 99%

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Viswanathan

Senthilkumar

Sriranjini

et al. 2005

Cryst. Res. Technol.

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“…The electron trapping factor, θ, for SCL conduction is [8,9] The measurements of the sample capacitance of a known thickness yielded a permittivity of 2.05 x 107 11 F m 71 (or a relative permittivity of ti 2.30) and this value was used in all the following calculations. These measurements were performed at 100 KHz usiug Tesla BM 507 impedance meter.…”

Section: Resultsmentioning

confidence: 99%

Transport Properties in 2,6-Diamino Anthraquinone

Khalil

Darwish

1994

Acta Phys. Pol. A

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Current density-voltage characteristics were obtained from 2,6-diamino anthraquinone samples using ohmic aluminium electrodes. Results showed that at low voltage the conduction process was ohmic, while at high voltage space-charge-limited conduction controlled by a single dominant trap level was presented. Thickness dependence measurements proved that the trapping sites were located at a discrete energy level. The transition voltage, V, between ohmic and space-charge-limited conduction was approximately proportional to the square of the sample thickness and was found to be temperature independent. The temperature dependence of ohmic and space-charge-limited current densities have been investigated. The results were interpreted in terms of extrinsic nature of ohmic conduction. Traps with density =2 x 102 4 m -3 l o c a t e d a t 0 . 5 0 ± 0 . 0 3 e V b e l o w t h e c o n d u c t i o n band edge have been observed.

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“…(3). For higher voltages I−V forward current is controlled by space charge limited current (SCLC) mechanism and the dependence of I vs. V can be described by the following formula [15]:…”

Section: Methodsmentioning

confidence: 99%

Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD

et al. 2017

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The undoped diamond layers were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the layers with varying amount of nondiamond impurities. Routine characterization of the layers was carried out using scanning electron microscopy, X-ray diffractometry, and the Raman spectroscopy. Detailed measurements of room temperature electrical conductivity (σ300), currentvoltage characteristics have yielded useful information about the electrical conduction mechanism in this interesting material. The σ300 and I−V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond shows room temperature dc conductivity reaching the values in the range of σ300 ≈ 0.1−1 µS/cm. The I−V characteristics in these layers show space charge limited conduction behavior with I ∼ V 2 in high voltage region. The obtained results are explained in terms of chemically adsorbed hydrogen on the surface of diamond layers, which is a source of acceptor states just above the top of valence band.

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Direct current conductivity and thermally stimulated current of β-nickel phthalocyanine films using gold and aluminium electrodes

Cited by 44 publications

References 13 publications

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Transport Properties in 2,6-Diamino Anthraquinone

Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD

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