2019
DOI: 10.1038/s41598-019-41137-w
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Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

Abstract: A new kind of magnetically-doped antiferromagnetic (AFM) topological insulators (TIs) with stoichiometry Bi1.09Gd0.06Sb0.85Te3 has been studied by angle-resolved photoemission spectroscopy (ARPES), superconducting magnetometry (SQUID) and X-ray magnetic circular dichroism (XMCD) with analysis of its electronic structure and surface-derived magnetic properties at different temperatures. This TI is characterized by the location of the Dirac gap at the Fermi level (EF) and a bulk AFM coupling below the Neel tempe… Show more

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Cited by 28 publications
(26 citation statements)
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“…Recent breakthrough in such direction has been made thanks to the growth technology of 2D ferromagnetic (FM) semiconductors [15,16] and more importantly, intrinsic 3D magnetic TI MnBi2Te4, a magnetic version in analogy to time-reversal (T) preserved TI Bi2Te3 stacked by Van der Waals (VdW) connected sublayers. It is predicted and soon experimentally verified that MnBi2Te4 in its magnetic ground state is a Z2 antiferromagnetic (AFM) TI protected by a combined symmetry of T and a fractional translation operation [17][18][19][20][21].…”
mentioning
confidence: 99%
“…Recent breakthrough in such direction has been made thanks to the growth technology of 2D ferromagnetic (FM) semiconductors [15,16] and more importantly, intrinsic 3D magnetic TI MnBi2Te4, a magnetic version in analogy to time-reversal (T) preserved TI Bi2Te3 stacked by Van der Waals (VdW) connected sublayers. It is predicted and soon experimentally verified that MnBi2Te4 in its magnetic ground state is a Z2 antiferromagnetic (AFM) TI protected by a combined symmetry of T and a fractional translation operation [17][18][19][20][21].…”
mentioning
confidence: 99%
“…Для анализа электронной структуры в области энергетической щели в точке Дирака и ее зависимости от температуры и уровня магнитного легирования обычно используется метод фотоэлектронной (ФЭ) спектроскопии с угловым разрешением (ФЭСУР), см. например [5][6][7][8][9][10][11][12][13][14][15][16][17]. При этом зачастую оказывается, что измеряемые дисперсионные картины для ряда магнитных ТИ демонстрируют слабую зависимость от температуры.…”
Section: Introductionunclassified
“…При этом зачастую оказывается, что измеряемые дисперсионные картины для ряда магнитных ТИ демонстрируют слабую зависимость от температуры. В измеряемых ФЭСУР-дисперсиях наблюдается сохранение щели в точке Дирака выше температуры Кюри или Нееля, для ферромагнитных (ФМ) и антиферромагнитных (АФМ) ТИ, т. е. при нарушении дальнодействующего магнитного упорядочения [7][8][9][11][12][13][14][15][16][17].…”
Section: Introductionunclassified
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