Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin 
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Lin, Meng-Kai; Villaos, Rovi Angelo B.; Hlevyack, Joseph A.; Chen, Peng; Liu, Ro-Ya; Hsu, Chia Hsiu; Ávila, J.; Mo, S.-K.; Chuang, Feng‐Chuan; Chiang, T.‐C.

doi:10.1103/physrevlett.124.036402

Cited by 60 publications

(66 citation statements)

References 34 publications

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“…The data for the two temperatures are similar, but the bands at 25 K are sharper because of reduced thermal broadening. The ARPES results confirm that single-layer PtTe2 is a semiconductor; the gap is 0.79 eV from theory 11 . Fig.…”

Section: Arpes Maps and Cdw Of Single-layer Tite 2 On Single-layer Pttesupporting

confidence: 70%

“…Research on single layers has demonstrated abundant cases of novel properties including lattice and charge distortions, magnetic ordering, Lifshitz or topological electronic transitions, superconductivity, etc. that are drastically different from the corresponding bulk cases [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] .…”

Section: Introductionmentioning

confidence: 57%

“…The corresponding second-derivative maps are shown in Fig. 2c and d together with the theoretical band dispersion relations (dashed curves) 11 . The data for the two temperatures are similar, but the bands at 25 K are sharper because of reduced thermal broadening.…”

Section: Arpes Maps and Cdw Of Single-layer Tite 2 On Single-layer Pttementioning

confidence: 99%

“…Transition metal dichalcogenides (TMDCs) [1][2][3][4][5][6][7][8][9][10][11]16,[19][20][21][22][23] , which form a huge group of van-der-Waals layered systems, are excellent parent materials for single layers. Many TMDCs exhibit charge density waves (CDWs) involving coupled charge and lattice distortions, which compete against other types of ordering.…”

Section: Introductionmentioning

confidence: 99%

“…PtTe2 is a semiconductor with a sizable gap 11 . The lack of electronic states near the Fermi level suggests a weak interfacial electronic interaction with the overlayer.…”

Section: Introductionmentioning

confidence: 99%

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Charge Instability in Single-Layer TiTe2 Mediated by van der Waals Bonding to Substrates

et al. 2020

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Single layers of materials, including numerous quasi-two-dimensional transition metal dichalcogenides, are of interest for emergent properties under extreme quantum confinement in reduced dimensions. A key issue, difficult to address and often neglected, is the influence of a substrate on the single-layer properties. We show that even weak van-der-Waals bonding between a single layer and its substrate can yield strong effects. The test system, single-layer TiTe2, shows a (2x2) charge density wave (CDW) below a critical temperature of TC = 92 K if it is grown on a bilayer graphene. When the same single layer is instead grown on PtTe2 films, its CDW TC becomes suppressed and varies strongly with the PtTe2 film thickness. This change in substrate PtTe2 thickness does not affect the interfacial epitaxial relationship, but the substrate transforms from a semiconductor with a sizable gap to a semimetal. The experimentally observed trend demonstrates the importance of interfacial electronic interaction. A general implication is that substrate effects are an integral part of single-layer physics.

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Section: Arpes Maps and Cdw Of Single-layer Tite 2 On Single-layer Pttesupporting

confidence: 70%

Section: Introductionmentioning

confidence: 57%

Section: Arpes Maps and Cdw Of Single-layer Tite 2 On Single-layer Pttementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…PtTe2 is a semiconductor with a sizable gap 11 . The lack of electronic states near the Fermi level suggests a weak interfacial electronic interaction with the overlayer.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Charge Instability in Single-Layer TiTe2 Mediated by van der Waals Bonding to Substrates

et al. 2020

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Terahertz Photodetection with Type‐II Dirac Fermions in Transition‐Metal Ditellurides and Their Heterostructures

Zhang

Guo

Kuo

et al. 2021

Physica Rapid Research Ltrs

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Transition‐metal dichalcogenides PtTe2, PdTe2, and NiTe2 deserve particular attention, due to the presence of type‐II Dirac fermions. As a matter of fact, tilted Dirac cones afford a suitable platform for optoelectronics of dissipation‐less carrier‐transport, favored by their ultrahigh carrier mobility, and large nonsaturating magnetoresistance. Herein, it is shown that PtTe2, PdTe2, and NiTe2 display high‐speed terahertz (THz) detection capability at room temperature, which originates from their peculiar band structure with topologically protected electronic states. Furthermore, photodetectors based on their heterostructures are able to suppress dark current with high‐performance detection of THz light. Furthermore, these crystals are stable in air and they can be easily exfoliated in nanosheets by liquid‐phase exfoliation, due to the weak interlayer van der Waals bonds. The obtained results clearly establish that the type‐II Dirac semimetals based on transition‐metal ditellurides have immense research potential for addressing application‐oriented issues for remote sensing and telecommunications.

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Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Ahmad

Zhuang

et al. 2023

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indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), gallium antimonide (GaSb), and indium arsenide (InAs), exhibit higher detectivity (D*), making them useful for infrared (IR) optical devices with a spectral range of up to 15 000 nm and D* as high as ≈10 14 Jones. However, employing these conventional photodetectors in commercial applications is challenging due to several factors, including narrow bandgap, complex and expensive fabrication process, and low-temperature operation mode. [2] Usually, conventional bulk semiconductor materials, even in the form of thin films, cannot be tempered. Using these materials to develop transparent, flexible, and bendable devices is challenging. Si possesses an indirect energy bandgap (1.12 eV) that is suitable for visible to nearinfrared (NIR) spectrum but is significantly limited beyond the NIR spectrum. Therefore, there is an increased need for novel materials that can overcome the limitations of bulk Si for broadband photodetection and can be suitable for developing advanced electronic and optoelectronic devices at low cost. Compared with conventional materials-based photodetectors, 2D materialsbased photo detectors are very sensitive to broadband spectrum owing to their tunable bandgap, which varies from 0 to 3 eV, as shown in Figure 1. [3] 2D materials-based photodetectors show a broad spectrum and excellent stability and thus can operate at room temperature. [4] 2D materials-based photodetectors not only show broaden spectrum but also show excellent stability and thus can operate at room temperature. [1b,5] The discovery of 2D transition metal dichalcogenides (TMDCs) materials has invoked great research interests in nanoelectronic and optoelectronic devices owing to their fascinating electronic and optoelectronic properties. In 2004, A. K. Geim and K. Novoselov assembled the graphene in the laboratory by mechanical exfoliation at room temperature. [6] According to the crystalline structure, 2D TMDCs layered materials can be divided into different prismatic phases such as hexagonal, octahedral, and tetragonal. In 2D TMDCs, each unit (MX2) is composed of a transition metal (M) layer sandwiched between two chalcogens (X) atomic layers. [3e,7] The 2D TMDCs materials family is a continuously emerging class of material systems with more than 150 different types of layered materials that can easily be exfoliated from the bulk crystals and possess distinctive features. [8] For instance, graphene with zero bandgap shows linear depression near the Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband...

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Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films

Cited by 60 publications

References 34 publications

Charge Instability in Single-Layer TiTe2 Mediated by van der Waals Bonding to Substrates

Charge Instability in Single-Layer TiTe2 Mediated by van der Waals Bonding to Substrates

Terahertz Photodetection with Type‐II Dirac Fermions in Transition‐Metal Ditellurides and Their Heterostructures

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

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