Diffusion of Nickel and Chlorine into Lead Telluride

Abstract

The diffusion of nickel and chlorine has been studied at the limit of solid solubility of both lead and tellurium in PbTe at 700~When nickel and chlorine are diffused simultaneously in a lead atmosphere there is an interaction between chlorine and the lattice such that the concentration profile of nickel exhibits a minimum. The same type of minimum in the nickel distribution is produced when lead is diffused under a lead concentration gradient into or out of a nickel-doped crystal. No minimum in the concentration of nickel was observed when a tellurium atmosphere is maintained above the crystal. The diffusion of chlorine indicates that there are anti-Frenkel defects on the anion sublattice.

Solid-State Bonding of Bulk PbTe to Nickel Electrode for Thermoelectric Modules

“…The average thickness of the interlayer is approximately 3 μm, and the discontinuity in the morphology is unwanted for application in a thermoelectric module. The lack of a defined barrier layer could lead to instability of the junction due to Ni diffusion into PbTe 35 or vice versa at the operating temperature of the device. Therefore, in order to increase the fabricated thickness and thus obtain a more homogeneous diffusion layer, the holding time for bonding was increased to 15 min (Figure 2c,d).…”

Determining dilute-limit solvus boundaries in multi-component systems using defect energetics: Na in PbTe and PbS

“…Intrinsic defects in the lead chalcogenides have been extensively investigated experimentally, beginning with Anderson and Richards 92 and Boltaks and Mokhov 93 on PbS and PbTe, respectively. Experimental studies of defects generally involve one of three measurement techniques: Hall coefficient measurements of carrier concentrations, [94][95][96][97][98][99][100][101][102][103][104][105][106] radio-isotope tracer diffusion measurements, 92,[107][108][109][110][111][112][113][114][115] and p-n junction penetration depths. 93,116 These three types of measurements are commonly taken under one of three conditions: (i) as a function of chalcogen partial pressure at fixed temperature, 94,96,100,101,[109][110][111][112][113][114] (ii) as a function of temperature at unspecified chalcogen partial pressures, [92][93][94][95][107][108][109]…”

“…Experimental studies of defects generally involve one of three measurement techniques: Hall coefficient measurements of carrier concentrations, [94][95][96][97][98][99][100][101][102][103][104][105][106] radio-isotope tracer diffusion measurements, 92,[107][108][109][110][111][112][113][114][115] and p-n junction penetration depths. 93,116 These three types of measurements are commonly taken under one of three conditions: (i) as a function of chalcogen partial pressure at fixed temperature, 94,96,100,101,[109][110][111][112][113][114] (ii) as a function of temperature at unspecified chalcogen partial pressures, [92][93][94][95][107][108][109]115,116 or (iii) as function of temperature at equilibrium between lead chalcogenide and lead or lead chalcogenide and chalcogen through the vapor phase. [97]…”