Differential Hall analysis of ultrashallow carrier profiles using X-ray photoelectron spectroscopy for nanometer depth resolution

Abstract

In this study, differential Hall measurement (DHM) was developed to measure the carrier profiles in phosphorus doped ultrashallow junctions (USJs). Experiments using uniform phosphorus profiles in silicon on insulator (SOI) wafers demonstrated that the growth rate of the native oxide strongly depends on the phosphorus doping level. Therefore, the thickness of native oxide was monitored by X-ray photoelectron spectroscopy (XPS) to achieve nanometer depth resolution during DHM. The DHM method was applied to investigate the deactivation of phosphorus in laser annealed USJs. The DHM results indicate carrier profile redistribution near the surface due to uphill diffusion caused by phosphorus deactivation.

Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

“…As suggested by Ref. 40, the oxidation rate possibly depends on the crystalline quality. However, in this work, the step-by-step etching was used not to evaluate a depth profile inside the ultra-shallow implanted layer but to remove the ultra-shallow implanted layer.…”

Nanotechnology Investigation of Ultra-shallow Junctions of Antimony (Sb) Implants in Conventional Silicon (Si)

“…Where χ j is the junction depth of the implanted layer, Ns is the sheet carrier density, is the electron charge and µ c is the conductivity mobility. Differential Hall effect Measurements (DHM) coupled with X-ray Photoelectron Spectroscopy (XPS), were applied by Su et al [12] to investigate the deactivation of phosphorous laser annealed ultra-shallow junction. The results indicate a carrier profile redistribution near surface due to uphill diffusion caused by phosphorous deactivation.…”