Dielectric Surface Roughness Scattering Limited Performance of MLGNR Interconnects

Sanaeepur, Majid

doi:10.1109/temc.2018.2830182

Cited by 28 publications

(29 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where P represents the Padé order. The polynomial matrices P(ψl) and P(-ψl) are divided into four sub-block matrices in order to obtain the approximated cos hyperbolic and sin hyperbolic functions of ( 27) and are shown by ( 31) and (32).…”

Section: B Proposed Mra Model For Hybrid Cu-cnt Interconnectsmentioning

confidence: 99%

“…The proposed model is implemented at larger interconnect lengths and is parameterized to incorporate the effects due to the surface roughness variations of the dielectric in which the hybrid Cu-CNT interconnect is placed. The dielectric surface roughness range is considered from 10-180 pm [32]. The entire 1-D grid for dielectric surface roughness variation is divided into 180 grid points.…”

Section: Table 5 Inphase Switching Delay (Ps) Comparison Between Cu-c...mentioning

confidence: 99%

See 1 more Smart Citation

Transient Analysis of Hybrid Cu-CNT On-Chip Interconnects Using MRA Technique

Kumar

Kaushik

2022

IEEE Open J. Nanotechnol.

View full text Add to dashboard Cite

This paper presents the transient analysis of the equivalent single conductor (ESC) model of hybrid Cu-CNT on-chip interconnects for nanopackaging using matrix rational approximation (MRA) modeling technique. The analysis of propagation delay and peak crosstalk noise is carried out for single and coupled Cu-CNT interconnect lines at 14 nm and 22 nm technology nodes. It has been observed that the proposed MRA model provides a speed-up factor of 131 compared to the HSPICE. An error of less than 1% confirms the accuracy of the proposed model compared to the SPICE simulations. It is observed that Cu-CNT lines are more immune to the crosstalk due to lesser coupling effects compared to Cu and CNT interconnects. The efficacy, accuracy, and comprehensive analysis using the proposed model ensures immense application possibility of the proposed model in the VLSI design automation tools at the nanopackaging level.

show abstract

Section: B Proposed Mra Model For Hybrid Cu-cnt Interconnectsmentioning

confidence: 99%

Section: Table 5 Inphase Switching Delay (Ps) Comparison Between Cu-c...mentioning

confidence: 99%

Transient Analysis of Hybrid Cu-CNT On-Chip Interconnects Using MRA Technique

Kumar

Kaushik

2022

IEEE Open J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…The MFP associated with scattering due to crystal defects and static impurities, λ d , is assumed to be 1 μm. 29 Assuming Harrison type dependence for C-C hopping energy, the MFP due to surface roughness scattering, λ sr , can be written as λ sr ¼ c=δ 4 sr 29 in which c = 2.07 Â 10 9 is a fitting parameter and δ sr (in picometers) represents the root mean square of surface roughness amplitude. The underlying dielectric material is assumed to be boron nitride for carbon-based interconnects.…”

Section: Mlgnr Interconnectsmentioning

confidence: 99%

A comprehensive comparative study of the performance of carbon‐ and copper‐based interconnects in ultra‐large‐scale integrated circuits

Sanaeepur

Mahmoudi

2021

Circuit Theory & Apps

Self Cite

View full text Add to dashboard Cite

Continuous increase of transistor count in ultra-large-scale integrated (ULSI) circuits demands denser interconnection networks to guarantee normal operation. As the distances between adjacent interconnect lines shrinks, severe crosstalk effects appear. New interconnect materials and technologies are proposed to alleviate deteriorating crosstalk effects and maintain overall circuit performance at a desirable level. Carbon-based materials including carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) are among promising candidate materials to replace copper in future ULSI interconnects. In this work, carbon-based interconnects including multiwall carbon nanotubes (MWCNTs) and multilayer graphene nanoribbons (MLGNRs), both horizontal (HMLGNRs) and vertical (VMLGNRs), are compared with traditional copper interconnects in terms of crosstalk delay and noise. Due to lower surface roughness, boron nitride (BN) is considered as substrate material for carbonbased interconnects. To obtain more accurate and reliable results, layer number dependence of dielectric constant of BN multilayers and surface roughness dependence of the resistivity of HMLGNR interconnects are considered. The role of interconnect length, line spacing, and interlayer distance (substrate thickness) in crosstalk delay and noise of coupled carbon-and Cu-based interconnect lines is investigated. It is shown that VMLGNR interconnects with perfect GNR edges exhibit the least crosstalk delay while MWCNT interconnects show far less crosstalk noise than other materials.

show abstract

“…[ 25 ] This is due to the interaction and scattering of charge carriers with acoustic and optical phonons, resonant scatterers, rough edges, and dielectric‐induced sources like trapped charge impurities, polar phonons, and atomic roughness of corrugated dielectric surfaces. [ 25,28 ] Although dielectric‐induced scattering sources are considered dominant factors in reducing the MFP and conductivity of GNRs, [ 29,30 ] it has been shown that structural edge roughness (SER) can critically deteriorate the electronic properties and performance of GNRs as an on‐chip interconnect. [ 31 ] Several MFP and circuit models have been proposed considering all the scattering sources except SER.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Multilayer Graphene Nanoribbon Interconnects Constrained by Structural Edge Roughness and Corrugated Surface Dielectric

Upadhyay

Kumar

Khanna

2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

which can further degrade the interconnect performance. Hence, the increase in resistivity due to scaling is further aggravated by rough surfaces of Cu interconnect. [5,6] As a result of the issues faced by conventional Cu interconnects, researchers are on a quest to find a suitable candidate for very large scale integration (VLSI) on-chip interconnects. Cu-based materials like Cu-carbon nanotube (Cu-CNT) composite, [7] Cu-Graphene hybrid, [8] and Cu-Carbon hybrid [9] have been proposed as possible substitutes for Cu interconnects. Although, it is worth noting that the related fabrication of Cubased materials faces many challenges like achieving uniform CNT-Cu distribution, compatibility with complementary metal oxide semiconductor (CMOS) technology, and lack of a fully developed fabrication process. [7][8][9] In recent years, 1D carbonbased nanomaterials like CNTs and graphene nanoribbons (GNRs) are of significant interest in various applications like electronic devices, VLSI on-chip interconnects, through silicon via (TSVs) for 3D ICs, sensors, optics, medicine, mechanics, spintronics and energy storage devices, owing to their exceptional electronic, optical, thermal, and mechanical properties. [10][11][12] Moreover, both GNRs and CNTs show higher current densities, electrical and thermal conductivities than Cu. [13] Hence, researchers proposed GNRs and CNTs as emerging alternatives to conventional Cu for VLSI on-chip interconnects. [13][14][15][16] GNRs having planar structures are more consistent with the semiconductor industry's fabrication technology, [17,18] making GNRs preferable to CNTs.GNRs are classified into single-layer (SLGNR) and multilayer (MLGNR) GNR, where SLGNR with a single layer of GNR has very high intrinsic resistance. Hence, to achieve lower resistance and better performance, MLGNR is proposed in which multiple GNR layers are stacked on top of one another. [19,20] The MLGNRs can be further classified based on the contact formed between metal and MLGNR, i.e., top-contact (TC-MLGNR) and side-contact (SC-MLGNR) MLGNR. SC-MLGNR has lower resistance as all the layers are physically coupled to metal contacts, whereas only the topmost layer forms a connection with the metal contact in TC-MLGNR, leading to its inferior performance. However, in the present scenario, fabrication of TC-MLGNR is less challenging and practically feasible than SC-MLGNR. [19,20] TC-MLGNRs

show abstract

Dielectric Surface Roughness Scattering Limited Performance of MLGNR Interconnects

Cited by 28 publications

References 32 publications

Transient Analysis of Hybrid Cu-CNT On-Chip Interconnects Using MRA Technique

Transient Analysis of Hybrid Cu-CNT On-Chip Interconnects Using MRA Technique

A comprehensive comparative study of the performance of carbon‐ and copper‐based interconnects in ultra‐large‐scale integrated circuits

Analysis of Multilayer Graphene Nanoribbon Interconnects Constrained by Structural Edge Roughness and Corrugated Surface Dielectric

Contact Info

Product

Resources

About