Didactic model of the diode with Finite Element Method

Abstract

The union of two extrinsic semiconductors, one of them doped with donor impurities and the other with acceptor impurities, constitutes what is called the diode. In this paper we present a didactic model of diode, from which its electrical characteristics can be extracted, such as the structure of energy bands, the characteristic curve of current voltage, etc. To achieve this purpose the Finite Element Method (FEM) was used. In essence, the MEF is a method that allows numerically approximate the solution of partial differential equations. It is well known that, except in very particular cases, obtain analytical solutions of such equations is impossible, and the only possibility is to find approximate solutions. This model is implemented in the search for new strategies and methods of teaching concepts related to electronic devices, such as diodes, transistors, light-emitting diodes, quantum devices, etc.