Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al<sub>2</sub>O<sub>3</sub> Passivation Layer

Hirama, Kazuyuki; Sato, Hisashi; Harada, Yoshio; Yamamoto, Hideki; Kasu, Makoto

doi:10.1143/jjap.51.090112

Cited by 140 publications

(58 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Next, we will demonstrate the MOSFET operation. 20 This is ascribed to the lower hole density for the common H-diamond. Figure 6 shows transfer characteristics corresponding to the I DS -V DS in Fig.…”

Section: A Interfacial Band Configurationmentioning

confidence: 99%

“…19 In addition, after exposing H-diamond to NO 2 ambient or annealing oxygen-terminated diamond at elevated temperature in mixture ambient of NH 3 and H 2 , the hole density was reported to be reached as high as 1 Â 10 14 cm À2 . 20,21 The Hdiamond epilayer with the high hole density provides promising for fabricating high-performance metal-oxide-semiconductor field effect transistors (MOSFETs).…”

mentioning

confidence: 99%

See 1 more Smart Citation

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Liu

Liao

Imura

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxidesemiconductor field-effect transistor applications Appl. Phys. Lett. 100, 062905 (2012); 10.1063/1.3684803 Energy-band alignment of Al 2 O 3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4 H -SiC Appl. Phys. Lett. 96, 042903 (2010); 10.1063/1.3291620Band alignments and improved leakage properties of ( La 2 O 3 ) 0.5 ( SiO 2 ) 0.5 / SiO 2 / GaN stacks for hightemperature metal-oxide-semiconductor field-effect transistor applications Impact of a γ -Al 2 O 3 ( 001 ) barrier on LaAlO 3 metal-oxide-semiconductor capacitor electrical propertiesIn order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO 3 films with thin Al 2 O 3 buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond metaloxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 lm have been investigated. The valence and conduction band offsets of the SD-LaAlO 3 /ALD-Al 2 O 3 structure are measured by X-ray photoelectron spectroscopy to be 1.1 6 0.2 and 1.6 6 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO 3 is evaluated to be 4.0 6 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond MOS diode is smaller than 10 À8 A cm À2 at gate bias from À4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from À3.6 6 0.1 to À5.0 6 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 lm are À7.5 mA mm À1 and 2.3 6 0.1 mS mm À1 , respectively. The enhancement mode SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices. V C 2013 AIP Publishing LLC.

show abstract

Section: A Interfacial Band Configurationmentioning

confidence: 99%

mentioning

confidence: 99%

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Liu

Liao

Imura

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…11 For example, a high drain current density above 1.3 A/mm has been reported. 12 The device performance of diamond MOSFETs strongly depends on the gate dielectric materials and oxide/diamond interfaces. Up to now, various oxides such as Al 2 O 3 , HfO 2 , and ZrO 2 were utilized as the gate dielectric for H-diamond MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Liao

Sang

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

Tailoring the electronic states of the dielectric oxide/diamond interface is critical to the development of next generation semiconductor devices like high-power high-frequency field-effect transistors. In this work, we investigate the electronic states of the TiO 2 /diamond 2 Â 1-(100) interface by using first principles total energy calculations. Based on the calculation of the chemical potentials for the TiO 2 /diamond interface, it is observed that the hetero-interfaces with the C-OTi configuration or with two O vacancies are the most energetically favorable structures under the Orich condition and under Ti-rich condition, respectively. The band structure and density of states of both TiO 2 /diamond and TiO 2 /H-diamond hetero-structures are calculated. It is revealed that there are considerable interface states at the interface of the anatase TiO 2 /diamond hetero-structure. By introducing H on the diamond surface, the interface states are significantly suppressed. A type-II alignment band structure is disclosed at the interface of the TiO 2 /diamond hetero-structure. The valence band offset increases from 0.6 to 1.7 eV when H is introduced at the TiO 2 /diamond interface.

show abstract

“…Recently, applicability of semiconducting diamond films to electronic devices has been extensively studied by fabricating Schottky diodes [3][4][5][6][7] and field-effect transistors (FET) [8][9][10][11][12][13][14][15]. One of the most essential topics to be studied for the diamond applications is the contact properties between the electrode metal layer and the diamond film.…”

Section: Introductionmentioning

confidence: 99%

Palladium Ohmic contact on hydrogen-terminated single crystal diamond film

Wang

et al. 2015

Diamond and Related Materials

View full text Add to dashboard Cite

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al₂O₃ Passivation Layer

Cited by 140 publications

References 31 publications

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Palladium Ohmic contact on hydrogen-terminated single crystal diamond film

Contact Info

Product

Resources

About

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3 Passivation Layer

Cited by 140 publications

References 31 publications

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Palladium Ohmic contact on hydrogen-terminated single crystal diamond film

Contact Info

Product

Resources

About

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al₂O₃ Passivation Layer