2018
DOI: 10.1016/j.orgel.2018.09.010
|View full text |Cite
|
Sign up to set email alerts
|

Device physics of organic electrochemical transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

14
278
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 261 publications
(323 citation statements)
references
References 187 publications
14
278
0
Order By: Relevance
“…Maximum channel‐width‐normalized transconductance ( g m / W) max is the peak value of the Figure d plot. Further analysis is given in Figures S6a and S6b, which show plots of ( g m / W) max versus V D and ( g m / W) max versus 1/ L . As expected according to Equation gnormalm=InormalDVnormalG=WLμCnormalGVnormalD g m / W increases linearly with V D , Figure S6a, and is also linear with 1/ L , Figure S6b.…”
Section: Resultssupporting
confidence: 53%
“…Maximum channel‐width‐normalized transconductance ( g m / W) max is the peak value of the Figure d plot. Further analysis is given in Figures S6a and S6b, which show plots of ( g m / W) max versus V D and ( g m / W) max versus 1/ L . As expected according to Equation gnormalm=InormalDVnormalG=WLμCnormalGVnormalD g m / W increases linearly with V D , Figure S6a, and is also linear with 1/ L , Figure S6b.…”
Section: Resultssupporting
confidence: 53%
“…C CH scales with film volume and R S scales as . 21,35 Thus, by putting together the scaling laws for C CH ∝ 1 and R S , . 21 A faster response can therefore be attained by making the channel τ ∝ d WL thinner and smaller channel geometry.…”
Section: Resultsmentioning
confidence: 99%
“…21,35 Thus, by putting together the scaling laws for C CH ∝ 1 and R S , . 21 A faster response can therefore be attained by making the channel τ ∝ d WL thinner and smaller channel geometry. As shown in Figure S6a, the response time scales with the channel thickness and geometry for our spray-coated OECT.…”
Section: Resultsmentioning
confidence: 99%
“…A transistor is a three-terminal device consist of a metallic source, drain and gate electrode (158) that…”
Section: Organic Electrochemical Transistor (Oect)mentioning
confidence: 99%