Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

Liu, Chuan; Li, Gongtan; Pietro, Riccardo Di; Huang, Jie; Noh, Yong‐Young; Liu, Xuying; Minari, Takeo

doi:10.1103/physrevapplied.8.034020

Cited by 195 publications

(188 citation statements)

References 40 publications

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“…Transistors are the most widely used devices to extract mobility values due to their convenience. As already mentioned in the Introduction, care should be taken during the extraction of charge transport characteristics, as should be for any measurements . Indeed, the equations used to model an OFET are only valid within the respect of their condition of applications (described later on in this section) in order to avoid misinterpretations, which can easily happen considering the multidisciplinarity of the field of organic electronics.…”

Section: Charge Transportmentioning

confidence: 99%

“…Despite being a routine measurement, this section clearly highlights the mandatory aspects and required conditions to use an OFET as a mobility evaluation technique. Recent papers have indeed rung the bell and raised the question of inflated values . It is only by a general good practice and care of understanding of the underlying principles that reliable extractions and measurements can be performed.…”

Section: Charge Transportmentioning

confidence: 99%

“…Even if this condition is an evidence for physicists, it is clear that errors might happen in a complex and multidisciplinary field. Science usually self‐corrects with time and hope of future good practice is expected, result of the current interest for reviews on proper parameter extractions . Within the years, some groups have demonstrated their ability to produce some of the best OFETs.…”

Section: Charge Transportmentioning

confidence: 99%

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Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V−1 s−1. However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

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Section: Charge Transportmentioning

confidence: 99%

Section: Charge Transportmentioning

confidence: 99%

Section: Charge Transportmentioning

confidence: 99%

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Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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“…(c)) which leads to a peak of the apparent mobility is attributed to the contact resistance and occurs when there is a large variation of the contact resistance with gate voltage . Depending on the shape of the transfer characteristics, the apparent mobility may underestimate or overestimate the intrinsic mobility. This can be misleading in the process of optimizing material and device fabrication.…”

Section: Ideal Otftmentioning

confidence: 99%

“…The shape of D ( E ) depends on the complex microscopic structure of the OSC and cannot be determined exactly. To overcome this difficulty, the authors considered the diffusion coefficient D ( E ) to be Gaussian‐like with a Gaussian width ΔD . The energetic conductivity in the LUMO band (assuming a Gaussian DOS with a Gaussian width ΔE ) is then described by

σ' (E) = \frac{q μ_{0} N_{0}}{2 \sqrt{2 π} (Δ D Δ E)} \exp [- \frac{{(E - E_{LUMO})}^{2}}{2 {((), Δ D Δ E)}^{2}}] .

…”

Section: Transport Properties and Mobility Modelsmentioning

confidence: 99%

Transport models in disordered organic semiconductors and their application to the simulation of thin‐film transistors

Simonetti

Giraudet

2019

Polymer International

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Relevant organic thin‐film transistor (OTFT) simulation software must account for the main specificities of organic semiconductors (OSCs) in terms of free carrier density of states, transport mechanisms and injection/collection properties from/to the device contacts. Among the parameters impacting the OTFT performance carrier mobility is a key parameter. Usual methods to extract the mobility from current–voltage measurements lead to only an apparent, or effective, mobility. The value of the apparent mobility is different from the intrinsic channel OSC mobility. Although the effective mobility actually determines most of a given device performance, therefore providing a very useful technology benchmark, it does not describe the intrinsic OSC material transport properties, and may even be misleading in the route to improving the OTFT fabrication process. To obtain a better understanding of the transport properties in OSCs using OTFT electrical characterization, implementing an appropriate physical mobility model in OTFT current–voltage simulation software is mandatory. The present paper gives a review of the carrier mobility models which can be implemented in OTFT simulation software. The review is restricted to analytical and semi‐analytical physical models taking into account the temperature, the carrier concentration and the electric field dependence of the carrier mobility in disordered OSCs. © 2019 Society of Chemical Industry

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Multilayer Integration for Organic Thin‐Film Transistors

Guo

Huang

Ouyang

et al. 2021

Digital Encyclopedia of Applied Physics

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The organic thin‐film transistor (OTFT) owns advantages of low processing temperature and excellent mechanical flexibility for creating truly flexible or stretchable electronics on arbitrate substrates. Beyond extensive research efforts in organic semiconductor (OSC) materials, stacking of the OSC and other layers for high performance OTFTs and circuit integration in a manufacturable way becomes vital. In this article, the advantages of OTFTs over inorganic counterparts are discussed in details. Then the suitable devices structures and multi‐layer material stacks for integration are introduced. The key processes for OSC deposition, device multi‐layer stacking, and especially OSC patterning are described. Finally, the circuit integration techniques, including not only the process for formation of via interconnection but also the circuit styles and integration architectures, are reviewed.

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Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

Cited by 195 publications

References 40 publications

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Transport models in disordered organic semiconductors and their application to the simulation of thin‐film transistors

Multilayer Integration for Organic Thin‐Film Transistors

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