Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization

Akturk, Akin; Allnutt, J.; Dilli, Z.; Goldsman, N.; Peckerar, M.

doi:10.1109/ted.2007.906966

Cited by 68 publications

(30 citation statements)

References 30 publications

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“…1). This doping profile gives a good match between experimental and measured data, and is in line with doping profiles deduced for this process using other device configurations [33]. More specifically, the peak concentration in and regions is cm , and this concentration drops with nm and nm in the depth and lateral directions assuming a shifted Gaussian profile where the mean is m away from the surface.…”

Section: B Doping Profile Modelsupporting

confidence: 86%

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

et al. 2010

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We report on the breakdown characteristics of a single-photon avalanche diode structure fabricated in a 0 5 m single-well CMOS process. This paper features two mechanisms for reducing perimeter breakdown. The first mechanism consists of using the lateral diffusion of adjacent n-wells to reduce the electric field at the diode's periphery, and the second makes use of a poly-silicon gate over the high field regions to modulate the electric field. We studied each technique independently as well as their combined effect on the devices' avalanche profiles. In addition to marked alterations in the current-voltage curves near and above breakdown, the diodes' breakdown voltages were increased by more than 4 V, indicating that perimeter breakdown was curtailed.We verified this assertion through a self-consistently solved 2-D numerical model based on Poisson's equation and the hole and electron current continuity equations coupled with rate equations for carrier generation due to impact ionization. The model revealed spatial maxima of the charge generation rates, thereby indicating regions susceptible to breakdown. Our investigation revealed that in native diodes, the generation rate peaked at the perimeter and near the junction's surface, suggesting perimeter breakdown. Conversely, in devices where suppression techniques were used, the region of maximum generation spread laterally and away from the surface, indicating full volumetric breakdown was achieved.

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Section: B Doping Profile Modelsupporting

confidence: 86%

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

et al. 2010

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“…We use our in-house developed physics-based simulator to study MOSFET behavior in the ESD device configuration [4,5]. We simulate the ggNMOS and gsPMOS independently to obtain the charge concentrations, potentials and currents during operation.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Nonlinear behavior of electrostatic discharge protection structures under high-power microwave excitation: Modeling and simulation

Dilli

Akturk

Goldsman

et al. 2011

2011 IEEE International Symposium of Circuits and Systems (ISCAS)

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Since electrostatic discharge (ESD) protection devices comprise the "front end," or interface between an integrated circuit and the system bus, they may be driven into nonlinearity when the system operates in a high-power microwave (HPM) environment. We have experimentally studied HPM effects in CMOS-based ESD devices, and showed that asymmetry in the large-signal responses of NMOS and PMOS ESD protection devices drives spurious bias shifts in the circuit. These shifts have been shown elsewhere to produce serious secondary effects such as increased power consumption, state errors and instability. Using an in-house developed physics-based driftdiffusion simulator, we present some fundamental imbalances in the NMOS and PMOS device behavior and performance.

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“…along with a suitable model for the activation energies E A and E D [5], [7]. Moreover, we consider models for the energy band gap and carrier mobilities that take the impurity density and temperature dependence into account.…”

Section: Device Concept and Charge Carrier Transportmentioning

confidence: 99%

Modeling and numerical simulation of electrically pumped single-photon emitters

Kantner

Bandelow

Koprucki

et al. 2015

2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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Semiconductor quantum dots are promising candidates for the realization of electrically pumped single-photon sources. The numerical simulation of such devices has to deal with cryogenic temperature effects and suitable models for the quantum dot occupation and single-photon generation. We demonstrate some first steps in a hybrid approach for the simulation of electrically pumped single-photon sources by coupling the semiconductor transport equations to a quantum mechanical model for the microscopic physics.

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Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization

Cited by 68 publications

References 30 publications

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

Nonlinear behavior of electrostatic discharge protection structures under high-power microwave excitation: Modeling and simulation

Modeling and numerical simulation of electrically pumped single-photon emitters

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