Device design guidelines for nano-scale MuGFETs

Lee, Chi‐Woo; Yun, Se-Re-Na; Yu, Chong Gun; Park, Jong-Tae; Colinge, Jean–Pierre

doi:10.1016/j.sse.2006.11.013

Cited by 104 publications

(33 citation statements)

References 16 publications

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“…The natural length is a parameter which represents the extension of the electric field lines from the source and the drain into the channel region. [29][30][31] In gateall-around devices with square cross-section, natural length is defined by the following expression:…”

Section: B Device Physicsmentioning

confidence: 99%

Influence of channel material properties on performance of nanowire transistors

Razavi

Fagas

Ferain

et al. 2012

Journal of Applied Physics

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Access to the full text of the published version may require a subscription. The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher I on /I off ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics. V C 2012 American Institute of Physics. Rights

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Section: B Device Physicsmentioning

confidence: 99%

Influence of channel material properties on performance of nanowire transistors

Razavi

Fagas

Ferain

et al. 2012

Journal of Applied Physics

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“…When more complex geometries such as FinFETs, Tri-Gates or SGTs are considered, an enhancement of the variations in the QED for different gate-oxide materials have been observed [10,11]. One of the main reasons is that in these devices quantum confinement effects are higher.…”

Section: Surrounding Gate Transistorsmentioning

confidence: 99%

Accurate modeling of Metal/HfO2/Si capacitors

et al. 2008

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In this work, we study the differences caused in the Capacitance-Voltage (C-V) characteristics of MOS devices when SiO 2 is replaced by HfO 2 as the gate dielectric. A self-consistent Schrödinger-Poisson solver has been developed to include the effects of quantum confinement and the influence of different parameters such as the effective mass, barrier height, and dielectric constant (κ) of the gate insulator material. Two different devices are considered: A Double Gate MOSFET and a Surrounding Gate Transistor. The validity of the Equivalent Oxide Thickness (EOT) is studied.

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“…Table 2 shows the natural length for different gate configurations. 12 e*4 4. MULTIGATE DEVICE DESIGN GUIDELINES The following observations can be made regarding the natural length (and regarding shortchannel effects).…”

Section: Electrostatic Controlmentioning

confidence: 99%

From Gate-all-Around to Nanowire MOSFETs

Colinge¹

2007

2007 International Semiconductor Conference

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The classical MOSFET is reaching its scaling limits and "end-of-roadmap" alternative devices are being investigated. Amongst the different types ofSOI devices proposed, one clearly stands out: the multigate field-effect transistor (multigate FET). This device has a general "wire-like" shape. Multigate FETs are commonly referred to as "multi(ple)-gate transistors ", "FinFETs ", "tri(ple)-gate transistors", "GAA transistors",, etc. This Paper describes the reasons for evolvingfrom single-gate to multi-gate structures. It also describe some issues in ultra-small devices, such as doping fluctuation effects and quantum confinement effect.

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Device design guidelines for nano-scale MuGFETs

Cited by 104 publications

References 16 publications

Influence of channel material properties on performance of nanowire transistors

Influence of channel material properties on performance of nanowire transistors

Accurate modeling of Metal/HfO2/Si capacitors

From Gate-all-Around to Nanowire MOSFETs

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